2N2219ALJANTX ON Semiconductor

2N2219ALJANTX electronic component of ON Semiconductor
2N2219ALJANTX ON Semiconductor
2N2219ALJANTX Bipolar Transistors - BJT
2N2219ALJANTX  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of 2N2219ALJANTX Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2N2219ALJANTX Bipolar Transistors - BJT are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

Part No. 2N2219ALJANTX
Manufacturer: ON Semiconductor
Category: Bipolar Transistors - BJT
Description: Trans GP BJT NPN 50V 0.8A 3-Pin TO-39 Bulk
Datasheet: 2N2219ALJANTX Datasheet (PDF)
Price (USD)
6: USD 11.3326 ea
Line Total: USD 68 
Availability : 0
  
QtyUnit Price
6$ 11.3326
10$ 10.1913
25$ 9.3069
50$ 9.0624
100$ 8.6981

Availability 0
Ship by Fri. 08 Aug to Thu. 14 Aug
MOQ : 6
Multiples : 1
QtyUnit Price
6$ 11.3326
10$ 10.1913
25$ 9.3069
50$ 9.0624
100$ 8.6981

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Transistor Polarity
Packaging
Brand
Collector Current Dc
Collector-Emitter Voltage
Power Dissipation
Operating Temp Range
Number Of Elements
Operating Temperature Classification
Rad Hardened
Collector-Base Voltage
Emitter-Base Voltage
Package Type
Pin Count
Dc Current Gain
Category
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the 2N2219ALJANTX from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2N2219ALJANTX and other electronic components in the Bipolar Transistors - BJT category and beyond.

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2N2219, 2N2219A, 2N2219AL Small Signal Switching Transistor NPN Silicon 2N2219, 2N2219A, 2N2219AL ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector Emitter Breakdown Voltage V Vdc (BR)CEO (I = 10 mAdc) 2N2219 30 E 2N2219A/AL 50 EmitterBase Cutoff Current I EBO (V = 5.0 Vdc) 2N2219 10 Adc EB (V = 6.0 Vdc) 2N2219A/AL 10 Adc EB (V = 4.0 Vdc) All 10 nAdc EB CollectorEmitter Cutoff Current I CES (V = 30 Vdc) 2N2219 10 nAdc CE (V = 50 Vdc) 2N2219A/AL 10 nAdc CE CollectorBase Cutoff Current I CBO (V = 50 Vdc) 2N2219 10 nAdc CB (V = 60 Vdc) 2N2219 10 Adc CB (V = 60 Vdc) 2N2219A/AL 10 nAdc CB (V = 75 Vdc) 2N2219A/AL 10 Adc CB ON CHARACTERISTICS (Note 1) DC Current Gain h FE (I = 0.1 mAdc, V = 10 Vdc) 2N2219 35 C CE 2N2219A/AL 50 (I = 1.0 mAdc, V = 10 Vdc) 2N2219 50 325 C CE 2N2219A/AL 75 325 (I = 10 mAdc, V = 10 Vdc) 2N2219 75 C CE 2N2219A/AL 100 (I = 150 mAdc, V = 10 Vdc) 2N2219/A/AL 100 300 C CE (I = 500 mAdc, V = 10 Vdc) 2N2219/A/AL 30 C CE Collector Emitter Saturation Voltage V Vdc CE(sat) (I = 150 mAdc, I = 15 mAdc) 2N2219 0.4 C B 2N2219A/AL 0.3 (I = 500 mAdc, I = 50 mAdc) 2N2219 1.6 C B 2N2219A/AL 1.0 Base Emitter Saturation Voltage V Vdc BE(sat) (I = 150 mAdc, I = 15 mAdc) 2N2219 0.6 1.3 C B 2N2219A/AL 0.6 1.2 (I = 500 mAdc, I = 50 mAdc) 2N2219 2.6 C B 2N2219A/AL 2.0 SMALLSIGNAL CHARACTERISTICS Magnitude of SmallSignal Current Gain h fe (I = 20 mAdc, V = 20 Vdc, f = 100 MHz) 2.5 12 C CE SmallSignal Current Gain h fe (I = 1.0 mAdc, V = 10 Vdc, f = 1 kHz) 2N2219 50 C CE 2N2219A/AL 75 Output Capacitance C pF obo (V = 10 Vdc, I = 0, 100 kHz f 1.0 MHz) 8.0 CB E Input Capacitance C pF ibo (V = 0.5 Vdc, I = 0, 100 kHz f 1.0 MHz) 25 EB C SWITCHING CHARACTERISTICS TurnOn Time t ns on (Reference Figure in MILPRF19500/251) 2N2219 40 2N2219A/AL 35 Turn Off Time t ns off (Reference Figure in MILPRF19500/251) 2N2219 250 2N2219A/AL 300 1. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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