2N5550TFR ON Semiconductor

2N5550TFR electronic component of ON Semiconductor
2N5550TFR ON Semiconductor
2N5550TFR Bipolar Transistors - BJT
2N5550TFR  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of 2N5550TFR Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2N5550TFR Bipolar Transistors - BJT are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

Part No. 2N5550TFR
Manufacturer: ON Semiconductor
Category: Bipolar Transistors - BJT
Description: Bipolar (BJT) Transistor NPN 140 V 600 mA 300MHz 625 mW Through Hole TO-92-3
Datasheet: 2N5550TFR Datasheet (PDF)
Price (USD)
6515: USD 0.0399 ea
Line Total: USD 259.95 
Availability : 9302
  
Ship by Fri. 15 Aug to Thu. 21 Aug
QtyUnit Price
6515$ 0.0399

Availability 15520
Ship by Fri. 15 Aug to Thu. 21 Aug
MOQ : 4000
Multiples : 2000
QtyUnit Price
4000$ 0.0479
6000$ 0.0459
10000$ 0.0452
26000$ 0.0441
50000$ 0.0424
100000$ 0.0414
150000$ 0.0408
250000$ 0.0401


Availability 9302
Ship by Fri. 15 Aug to Thu. 21 Aug
MOQ : 4000
Multiples : 1
QtyUnit Price
4000$ 0.065
6515$ 0.0399


Availability 7934
Ship by Wed. 13 Aug to Fri. 15 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.3125
10$ 0.1887
100$ 0.1152
500$ 0.0792
1000$ 0.0715
2000$ 0.0572
4000$ 0.0506
10000$ 0.0462
24000$ 0.0429


Availability 15520
Ship by Fri. 15 Aug to Thu. 21 Aug
MOQ : 4000
Multiples : 2000
QtyUnit Price
4000$ 0.0697
6000$ 0.0668
10000$ 0.0634
26000$ 0.0617
50000$ 0.0593


Availability 1656
Ship by Wed. 13 Aug to Fri. 15 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.294
10$ 0.1848
100$ 0.1134
269$ 0.07
738$ 0.0672


Availability 67
Ship by Fri. 22 Aug to Wed. 27 Aug
MOQ : 5
Multiples : 5
QtyUnit Price
5$ 0.167
50$ 0.1332
150$ 0.1164
500$ 0.0701
2000$ 0.0632
4000$ 0.0598


Availability 9302
Ship by Fri. 15 Aug to Thu. 21 Aug
MOQ : 6515
Multiples : 1
QtyUnit Price
6515$ 0.0399


Availability 17460
Ship by Fri. 15 Aug to Thu. 21 Aug
MOQ : 4000
Multiples : 2000
QtyUnit Price
4000$ 0.0677
6000$ 0.0611
6000$ 0.0582
10000$ 0.0516
14000$ 0.0498
20000$ 0.0483
24000$ 0.0449
50000$ 0.0444

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
Height
Length
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the 2N5550TFR from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2N5550TFR and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore ( ), the underscore ( ) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore ( ). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to Fairchild questions onsemi.com. ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductors product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. Typical parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.2N5550 NPN Epitaxial Silicon Transistor February 2015 2N5550 NPN Epitaxial Silicon Transistor Features Amplifier Transistor Collector-Emitter Voltage: V = 140 V CEO TO-92 1 1. Emitter 2. Base 3. Collector Ordering Information Part Number Top Mark Package Packing Method 2N5550BU 2N5550 TO-92 3L Bulk 2N5550TA 2N5550 TO-92 3L Ammo 2N5550TAR 2N5550 TO-92 3L Ammo 2N5550TF 2N5550 TO-92 3L Tape and Reel 2N5550TFR 2N5550 TO-92 3L Tape and Reel Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera- ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi- tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at T = 25C unless otherwise noted. A Symbol Parameter Value Unit V Collector-Base Voltage 160 V CBO V Collector-Emitter Voltage 140 V CEO V Emitter-Base Voltage 6 V EBO I Collector Current 600 mA C T Junction Temperature 150 C J T Storage Temperature -55 to 150 C STG 2000 Fairchild Semiconductor Corporation www.fairchildsemi.com 2N5550 Rev. 1.4

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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