2SA2016-TD-E ON Semiconductor

2SA2016-TD-E electronic component of ON Semiconductor
2SA2016-TD-E ON Semiconductor
2SA2016-TD-E Bipolar Transistors - BJT
2SA2016-TD-E  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of 2SA2016-TD-E Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2SA2016-TD-E Bipolar Transistors - BJT are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

Part No. 2SA2016-TD-E
Manufacturer: ON Semiconductor
Category: Bipolar Transistors - BJT
Description: Bipolar (BJT) Transistor PNP 50 V 7 A 330MHz 3.5 W Surface Mount PCP
Datasheet: 2SA2016-TD-E Datasheet (PDF)
Price (USD)
1: USD 1.279 ea
Line Total: USD 1.28 
Availability : 518
  
Ship by Fri. 03 Oct to Thu. 09 Oct
QtyUnit Price
1$ 1.279
10$ 1.0456
30$ 0.6943
100$ 0.5462
500$ 0.4729
1000$ 0.4486

Availability 518
Ship by Fri. 03 Oct to Thu. 09 Oct
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.279
10$ 1.0456
30$ 0.6943
100$ 0.5462
500$ 0.4729
1000$ 0.4486


Availability 754
Ship by Wed. 01 Oct to Fri. 03 Oct
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.47
10$ 0.9646
29$ 0.6776
79$ 0.6412
100$ 0.6398

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Series
Packaging
Brand
Dc Collector/Base Gain Hfe Min
Factory Pack Quantity :
Continuous Collector Current
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Category
Brand Category
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the 2SA2016-TD-E from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2SA2016-TD-E and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Ordering number : EN6309D 2SA2016/2SC5569 Bipolar Transistor 2SA2016 / 2SC5569 Continued from preceding page. Parameter Symbol Conditions Ratings Unit Collector Current I (--)7 A C Collector Current (Pulse) I (--)10 A CP Base Current I (--)1.2 A B 2 When mounted on ceramic substrate (250mm 0.8mm) 1.3 W Collector Dissipation P C Tc=25C 3.5 W Junction Temperature Tj 150 C Storage Temperature Tstg --55 to +150 C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current I V =(--)40V, I =0A (--)0.1 A CBO CB E Emitter Cutoff Current I V =(--)4V, I =0A (--)0.1 A EBO EB C DC Current Gain h V =(--)2V, I =(--)500mA 200 560 FE CE C Gain-Bandwidth Product f V =(--)10V, I =(--)500mA (290)330 MHz T CE C Output Capacitance Cob V =(--)10V, f=1MHz (50)28 pF CB V (sat)1 I =(--)3.5A, I =(--)175mA (--230)160 (--390)240 mV CE C B Collector-to-Emitter Saturation Voltage V (sat)2 I =(--)2A, I =(--)40mA (--240)110 (--400)170 mV CE C B Base-to-Emitter Saturation Voltage V (sat) I =(--)2A, I =(--)40mA (--)0.83 (--)1.2 V BE C B Collector-to-Base Breakdown Voltage V I =(--)10A, I =0A (--50)100 V (BR)CBO C E Collector-to-Emitter Breakdown Voltage V I =(--)100A, R =0 (--50)100 V (BR)CES C BE Collector-to-Emitter Breakdown Voltage V I =(--)1mA, R = (--)50 V (BR)CEO C BE Emitter-to-Base Breakdown Voltage V I =(--)10A, I =0A (--)6 V (BR)EBO E C Turn-On Time t (40)30 ns on Storage Time t See speci ed Test Circuit. (225)420 ns stg Fall Time t 25 ns f Switching Time Test Circuit I B1 PW=20s OUTPUT D.C.1% I B2 INPUT R B V R R L 50 + + 100F 470F V = --5V V =25V BE CC I =20I = --20I =2.5A C B1 B2 For PNP, the polarity is reversed. Ordering Information Device Package Shipping memo 2SA2016-TD-E PCP 1,000pcs./reel Pb Free 2SC5569-TD-E PCP 1,000pcs./reel No.6309-2/8

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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