Ordering number : EN1787C 2SB1121 Bipolar Transistor 2SB1121 Continued from preceding page. Parameter Symbol Conditions Ratings Unit 500 mW Collector Dissipation P C 2 When mounted on ceramic substrate (250mm 0.8mm) 1.3W Junction Temperature T 150 C j Storage Temperature Tstg -55 to +150 C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Electrical Characteristics at Ta = 25C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current I V =-20V, I=0A -0.1 A CBO CB E Emitter Cutoff Current I V =-4V, I=0A -0.1 A EBO EB C h1 V =-2V, I=-100mA 140* 400* FE CE C DC Current Gain h2 V =-2V, I=-1.5A 65 FE CE C Gain-Bandwidth Product f V =-10V, I=-50mA 150 MHz T CE C Output Capacitance Cob V =-10V, f=1MHz 32 pF CB Collector to Emitter Saturation Voltage V(sat) I =-1.5A, I=-75mA -0.35 -0.6V CE C B Base to Emitter Saturation Voltage V(sat) I =-1.5A, I=-75mA -0.85 -1.2V BE C B Collector to Base Breakdown Voltage V I =-10A, I=0A -30 V (BR)CBO C E Collector to Emitter Breakdown Voltage V I =-1mA, R = -25 V (BR)CEO C BE Emitter to Base Breakdown Voltage V I =-10A, I=0A -6 V (BR)EBO E C Turn-ON Time t 60 ns on Storage Time t See specified Test Circuit 350 ns stg Fall Time t 25 ns f *: The 2SB1121 is classified by 100mA h FE as follows: Rank S T h 140 to 280 200 to 400 FE Switching Time Test Circuit Ordering Information Device Package Shipping Memo 2SB1121S-TD-E PCP Pb-Free 1,000pcs./reel 2SB1121T-TD-E No. 1787-2/4