50A02CH Bipolar Transistor 50V, 0.5A, Low VCE(sat), PNP Single www.onsemi.com Features High Collector Current Capability Low Collector to Emitter Saturation Voltage (Resistance): R (sat) typ=210m I =0.5A, I =50mA CE C B ELECTRICAL CONNECTION Low ON-Resistance (Ron) Pb-Free, Halogen Free and RoHS compliance 3 1:Base 1 2 : Emitter Typical Applications 3 : Collector Low-Frequency Amplifier High Speed Switching 2 Small Motor Drive Muting Circuit MARKING 3 SPECIFICATIONS ABSOLUTE MAXIMUM RATING at Ta = 25C (Note 1, 2) 1 2 Parameter SymbolValue Unit CPH3 Collector to Base Voltage V 50 V CBO Collector to Emitter Voltage V 50 V CEO Emitter to Base Voltage V 5V EBO ORDERING INFORMATION Collector Current I 500 mA C See detailed ordering and shipping Collector Current (Pulse) I 1.0 A information on page 5 of this data sheet. CP Collector Dissipation (Note 2) P 700mW C Junction Temperature Tj 150 C Storage Temperature Tstg 55 to +150 C Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 2 Note 2 : Surface mounted on ceramic substrate(600mm 0.8mm) Semiconductor Components Industries, LLC, 2016 1 Publication Order Number : April 2016 - Rev. 2 50A02CH/D AX LOT No.50A02CH ELECTRICAL CHARACTERISTICS at Ta = 25C (Note 3) Value Parameter Symbol Conditions Unit min typ max Collector Cutoff Current I V =40V, I=0A 100 nA CBO CB E Emitter Cutoff Current I V =4V, I=0A 100 nA EBO EB C DC Current Gain h V =2V, I =10mA 200 500 FE CE C Gain-Bandwidth Product f V =10V, I =50mA 690 MHz T CE C Output Capacitance Cob V =10V, f=1MHz 3.8 pF CB Collector to Emitter Saturation V(sat) I =100mA, I =10mA 60 120 mV CE C B Voltage Base to Emitter Saturation Voltage V(sat) I =100mA, I =10mA 0.9 1.2 V BE C B Collector to Base Breakdown V I =10 A, I =0A 50 V (BR)CBO C E Voltage Collector to Emitter Breakdown V I =1mA, R = 50 V (BR)CEO C BE Voltage 5 Emitter to Base Breakdown Voltage V I =10 A, I =0A V (BR)EBO E C 30 Turn-On Time t ns on See specified Test 170 Storage Time t ns stg Circuit Fall Time 30 t ns f Note 3 : Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Switching Time Test Circuit www.onsemi.com 2