MPSA42 / MMBTA42 / PZTA42 NPN High-Voltage Amplifier October 2014 MPSA42 / MMBTA42 / PZTA42 NPN High-Voltage Amplifier Features This device is designed for application as a video output and other high-voltage applications. Sourced from process 48. MPSA42 MMBTA42 PZTA42 C C E E C B B SOT-23 TO-92 SOT-223 Mark: 1D E B C Ordering Information Part Number Top Mark Package Packing Method MPSA42 MPSA42 TO-92 3L Bulk MMBTA42 1D SOT-23 3L Tape and Reel PZTA42 A42 SOT-223 4L Tape and Reel (1), (2) Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera- ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi- tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at T = 25C unless otherwise noted. A Symbol Parameter Value Unit V Collector-Emitter Voltage 300 V CEO V Collector-Base Voltage 300 V CBO V Emitter-Base Voltage 6 V EBO Collector Current - Continuous 500 mA I C T T Operating and Storage Junction Temperature Range -55 to +150 C J, STG Notes: 1. These ratings are based on a maximum junction temperature of 150C. 2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or low-duty-cycle operations. 1997 Fairchild Semiconductor Corporation www.fairchildsemi.com MPSA42 / MMBTA42 / PZTA42 Rev. 1.1.0MPSA42 / MMBTA42 / PZTA42 NPN High-Voltage Amplifier Thermal Characteristics Values are at T = 25C unless otherwise noted. A Max. Symbol Parameter Unit (3) (4) MPSA42 MMBTA42 PZTA42 Total Device Dissipation 625 240 1000 mW P D Derate Above 25C 5.00 1.92 8.00 mW/C R Thermal Resistance, Junction-to-Case 83.3 C/W JC R Thermal Resistance, Junction-to-Ambient 200 515 125 C/W JA Notes: 3. Device is mounted on FR-4 PCB 1.6 inch x 1.6 inch x 0.06 inch. 2 4. Device is mounted on FR-4 PCB 36 mm x 18 mm x 1.5 mm, mounting pad for the collector lead minimum 6 cm . Electrical Characteristics Values are at T = 25C unless otherwise noted. A Symbol Parameter Conditions Min. Max. Unit Off Characteristics (5) V Collector-Emitter Breakdown Voltage I = 1.0 mA, I = 0 300 V (BR)CEO C B V Collector-Base Breakdown Voltage I = 100 A, I = 0 300 V (BR)CBO C E V Emitter-Base Breakdown Voltage I = 100 A, I = 0 6 V (BR)EBO E C I Collector Cut-Off Current V = 200 V, I = 0 0.1 A CBO CB E I Emitter Cut-Off Current V = 6 V, I = 0 0.1 A EBO EB C (5) On Characteristics V = 10 V, I = 1.0 mA 25 CE C h DC Current Gain V = 10 V, I = 10 mA 40 FE CE C V = 10 V, I = 30 mA 40 CE C V Collector-Emitter Saturation Voltage I = 20 mA, I = 2.0 mA 0.5 V CE(sat) C B V Base-Emitter Saturation Voltage I = 20 mA, I = 2.0 mA 0.9 V BE(sat) C B Small Signal Characteristics I = 10 mA, V = 20 V, C CE f Current Gain - Bandwidth Product 50 MHz T f = 100 MHz V = 20 V, I = 0, CB E C Collector-Base Capacitance 3.0 pF cb f = 1.0 MHz Notes: 5. Pulse test: pulse width 300 s, duty cycle 2%. 1997 Fairchild Semiconductor Corporation www.fairchildsemi.com MPSA42 / MMBTA42 / PZTA42 Rev. 1.1.0 2