BC856BDW1T1G ON Semiconductor

BC856BDW1T1G electronic component of ON Semiconductor
BC856BDW1T1G ON Semiconductor
BC856BDW1T1G Bipolar Transistors - BJT
BC856BDW1T1G  Semiconductors
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X-On Electronics has gained recognition as a prominent supplier of BC856BDW1T1G Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. BC856BDW1T1G Bipolar Transistors - BJT are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

Part No. BC856BDW1T1G
Manufacturer: ON Semiconductor
Category: Bipolar Transistors - BJT
Description: ON Semiconductor Bipolar Transistors - BJT 100mA 80V Dual PNP
Datasheet: BC856BDW1T1G Datasheet (PDF)
Price (USD)
15000: USD 0.0213 ea
Line Total: USD 319.5 
Availability : 200790
  
Ship by Mon. 17 Nov to Fri. 21 Nov
QtyUnit Price
15000$ 0.0213

Availability 26190
Ship by Mon. 17 Nov to Fri. 21 Nov
MOQ : 3000
Multiples : 3000
QtyUnit Price
3000$ 0.0245
9000$ 0.0235
27000$ 0.0231
51000$ 0.0229
102000$ 0.0225
150000$ 0.0221


Availability 55265
Ship by Mon. 17 Nov to Fri. 21 Nov
MOQ : 3206
Multiples : 1
QtyUnit Price
3206$ 0.0811
5077$ 0.0512
5129$ 0.0507
7435$ 0.035
7752$ 0.0335
8000$ 0.0325
8265$ 0.0314
8548$ 0.0304
8850$ 0.0294
15000$ 0.0274
30000$ 0.0264


Availability 200790
Ship by Mon. 17 Nov to Fri. 21 Nov
MOQ : 15000
Multiples : 3000
QtyUnit Price
15000$ 0.0213


Availability 86849
Ship by Thu. 13 Nov to Mon. 17 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.175
10$ 0.1025
100$ 0.07
500$ 0.0517
1000$ 0.0429
3000$ 0.0308


Availability 2745
Ship by Mon. 17 Nov to Fri. 21 Nov
MOQ : 10
Multiples : 10
QtyUnit Price
10$ 0.0828
100$ 0.065
300$ 0.0562
3000$ 0.0327
6000$ 0.0292
9000$ 0.0273


Availability 629
Ship by Thu. 13 Nov to Mon. 17 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.168
10$ 0.1372
50$ 0.0994
100$ 0.084
394$ 0.049


Availability 55265
Ship by Mon. 17 Nov to Fri. 21 Nov
MOQ : 7752
Multiples : 1
QtyUnit Price
7752$ 0.0335
8000$ 0.0325
8265$ 0.0314
8548$ 0.0304
8850$ 0.0294
15000$ 0.0274
30000$ 0.0264


Availability 26190
Ship by Mon. 17 Nov to Fri. 21 Nov
MOQ : 9000
Multiples : 3000
QtyUnit Price
9000$ 0.0356
9000$ 0.034
27000$ 0.0316


Availability 14550
Ship by Mon. 17 Nov to Fri. 21 Nov
MOQ : 14564
Multiples : 1
QtyUnit Price
14564$ 0.0323
100000$ 0.027


Availability 200790
Ship by Mon. 17 Nov to Fri. 21 Nov
MOQ : 15000
Multiples : 3000
QtyUnit Price
15000$ 0.0213

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Brand
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
Category
Brand Category
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We are delighted to provide the BC856BDW1T1G from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BC856BDW1T1G and other electronic components in the Bipolar Transistors - BJT category and beyond.

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The BC856BDW1T1G is a PNP Bias Resistor Transistor from ON Semiconductor. It is a medium power surface mount device featuring a small SOT-23 3-pin package and offering an operating temperature range from -65°C up to +150°C. It's designed for general purpose, medium power applications such as sensor control and audio amplifiers. The base-emitter voltage range is from -7V up to -300V and the collector-emitter voltage range is from -50V up to -600V. It has excellent hFE linearity and a low saturation voltage. It is constructed with high reliability SOD-123 technology and is ideal for space saving applications in small form factor packages.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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