CPH3145/CPH3245 Low V (sat) Bipolar Transistor CE (PNP)NPN, ()50V, ()2A Features Adoption of MBIT Process www.onsemi.com Large Current Capacity Low Collector to Emitter Saturation Voltage High Speed Switching ELECTRICAL CONNECTION Ultrasmall Package Facilitates Miniaturization in End Products PNP NPN (mounting height : 0.9mm) 3 3 High Allowable Power Dissipation Typical Applications Relay Drivers 1 1 Lamp Drivers Motor Drivers 2 2 Flash CPH3145 CPH3245 SPECIFICATIONS ( ) : CPH3145 1:Base ABSOLUTE MAXIMUM RATING at Ta = 25C (Note 1) 2:Emitter Parameter SymbolValue Unit 3:Collector Collector to Base Voltage V (50)80 V CBO Collector to Emitter Voltage V (50)80 V CES PACKING TYPE : TL Collector to Emitter Voltage V ()50 V CEO Emitter to Base Voltage V ()6 V EBO Collector Current I ()2 A C Collector Current (Pulse) I ()4 A CP TL Base Current I ()400 mA B Collector Dissipation When mounted on ceramic substrate P 0.9 C W 2 MARKING (600mm 0.8mm) Junction Temperature Tj 150 C Storage Temperature Tstg 55 to +150 C Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. CPH3145 CPH3245 ORDERING INFORMATION See detailed ordering and shipping information on page 5 of this data sheet. Semiconductor Components Industries, LLC, 2015 1 Publication Order Number : June 2015 - Rev. 2 CPH3145 CPH3245/D BE LOTNo. DQ LOTNo.CPH3145/CPH3245 ELECTRICAL CHARACTERISTICS at Ta = 25C (Note 2) Value Parameter Symbol Conditions Unit min typ max Collector Cutoff Current I V =()40V, I=0A ()1 A CBO CB E Emitter Cutoff Current I V =()4V, I=0A ()1 A EBO EB C DC Current Gain h V =()2V, I =()100mA 200 560 FE CE C Gain-Bandwidth Product f V =()10V, I =()300mA 420 MHz T CE C Output Capacitance Cob V =()10V, f=1MHz (16)8 pF CB Collector to Emitter Saturation V (sat) CE (165)130 (330)260 mV Voltage I =()1A, I =()50mA C B V (sat) Base to Emitter Saturation Voltage ()0.9 ()1.2 V BE Collector to Base Breakdown V I =()10A, I =0A (50)80 V (BR)CBO C E Voltage Collector to Emitter Breakdown V I =()100A, R =0 (50)80 V (BR)CES C BE Voltage Collector to Emitter Breakdown I =()1mA, R = V ()50 V C BE (BR)CEO Voltage Emitter to Base Breakdown Voltage I =()10A, I =0A ()6 V V E C (BR)EBO Turn-ON Time t (35)35 ns on Storage Time t See specified Test Circuit (200)330 ns stg Fall Time t (24)40 ns f Note 2 : Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Switching Time Test Circuit I I B1 B1 PW=20s PW=20s OUTPUT OUTPUT D.C.1% D.C.1% I I B2 B2 INPUT INPUT R R B B V V R R R R L L 50 50 + + + + 100F470F 100F470F V =5V V =--5V V =--25V V =25V BE CC BE CC I =--10I =10I =--0.7A I =10I = --10I =0.7A C B1 B2 C B1 B2 CPH3145 CPH3245 www.onsemi.com 2