KSC5021 NPN Silicon Transistor October 2008 KSC5021 NPN Silicon Transistor High Voltage and High Reliability High Speed Switching : t = 0.1 ms (Typ.) F Wide SOA TO-220 1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings T = 25C unless otherwise noted C Symbol Parameter Value Units V Collector-Base Voltage 800 V CBO V Collector-Emitter Voltage 500 V CEO V Emitter-Base Voltage 7 V EBO I Collector Current (DC) 5 A C I Collector Current (Pulse) 10 A CP I Base Current 2 A B P Collector Dissipation (T =25 C) 50 W C C T Junction Temperature 150 C J T Storage Temperature - 55 ~ 150 C STG 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com KSC5021 Rev. 1.0.0 1 KSC5021 NPN Silicon Transistor Electrical Characteristics T = 25C unless otherwise noted C Symbol Parameter Conditions Min. Typ. Max Units BV Collector-Base Breakdown Voltage I = 1mA, I = 0 800 V CBO C E BV Collector-Emitter Breakdown Voltage I = 5mA, I = 0 500 V CEO C B BV Emitter-Base Breakdown Voltage I = 1mA, I = 0 7 V EBO E C V (sus) Collector-Emitter Sustaining Voltage I = 2.5A, I = -I = 1A 500 V CEX C B1 B2 L = 1mH, Clamped I Collector Cut-off Current V = 500V, I = 0 10 mA CBO CB E I Emitter Cut-off Current V = 5V, I = 0 10 mA EBO EB C h DC Current Gain V = 5V, I = 0.6A 15 50 FE1 CE C h V = 5V, I = 3A 8 FE2 CE C V (sat) Collector-Emitter Saturation Voltage I = 3A, I = 0.6A 1 V CE C B V (sat) Base-Emitter Saturation Voltage I = 3A, I = 0.6A 1.5 V BE C B C Output Capacitance V = 10V, I = 0, f=1MHz 80 pF ob CB E f Current Gain Bandwidth Product V = 10V, I = 0.6A 18 MHz T CE C t Turn On Time V = 200V 0.5 ms ON CC I = 5I = -2.5I = 4A C B1 B2 t Storage Time 3 ms STG R = 50 W L t Fall Time 0.3 ms F * Pulse Test: PW 300 ms, Duty Cycle 2% h Classification FE Classification R O Y h 15 ~ 30 20 ~ 40 30 ~ 50 FE1 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com KSC5021 Rev. 1.0.0 2