Product Information

MCH6102-TL-E

MCH6102-TL-E electronic component of ON Semiconductor

Datasheet
Bipolar Transistors - BJT BIP PNP 1.5A 30V

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.4525 ea
Line Total: USD 0.45

2122 - Global Stock
Ships to you between
Tue. 28 May to Thu. 30 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2122 - WHS 1


Ships to you between Tue. 28 May to Thu. 30 May

MOQ : 1
Multiples : 1

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MCH6102-TL-E
ON Semiconductor

1 : USD 0.4669
10 : USD 0.3726
100 : USD 0.2541
1000 : USD 0.1564
3000 : USD 0.1357
9000 : USD 0.1265
24000 : USD 0.1219
45000 : USD 0.1219
99000 : USD 0.1184

     
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RoHS - XON
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Cnhts
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Mxhts
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LOT No. LOT No. LOT No. LOT No. Ordering number : EN6480C MCH6102/MCH6202 Bipolar Transistor MCH6102/MCH6202 Continued from preceding page. Parameter Symbol Conditions Ratings Unit Collector Current I (--)1.5 A C Collector Current (Pulse) I (--)3 A CP Base Current I (--)300 mA B 2 Collector Dissipation P When mounted on ceramic substrate (600mm 0.8mm) 1.0 W C Junction Temperature Tj 150 C Storage Temperature Tstg --55 to +150 C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current I V =(--)30V, I =0A (--)0.1 A CBO CB E Emitter Cutoff Current I V =(--)4V, I =0A (--)0.1 A EBO EB C DC Current Gain h V =(--)2V, I =(--)100mA 200 560 FE CE C Gain-Bandwidth Product f V =(--)10V, I =(--)300mA (450)500 MHz T CE C Output Capacitance Cob V =(--)10V, f=1MHz (9)8 pF CB Collector-to-Emitter Saturation Voltage V (sat) I =(--)750mA, I =(--)15mA (--250)150 (--375)225 mV CE C B Base-to-Emitter Saturation Voltage V (sat) I =(--)750mA, I =(--)15mA (--)0.85 (--)1.2 V BE C B Collector-to-Base Breakdown Voltage V I =(--)10A, I =0A (--30)40 V (BR)CBO C E Collector-to-Emitter Breakdown Voltage V I =(--)1mA, R = (--)30 V (BR)CEO C BE Emitter-to-Base Breakdown Voltage V I =(--)10A, I =0A (--)5 V (BR)EBO E C Turn-ON Time t (37)35 ns on Storage Time t See speci ed Test Circuit. (115)205 ns stg Fall Time t (26)32 ns f Switching Time Test Circuit I B1 I B2 OUTPUT INPUT R B PW=20 s R =16 L V R D.C.1% + + 50 100 F 470 F V = --5V V =12V BE CC I =20I = --20I =750mA C B1 B2 For PNP, the polarity is reversed. Ordering Information Device Package Shipping memo MCH6102-TL-E MCPH6 3,000pcs./reel Pb Free MCH6202-TL-E MCPH6 3,000pcs./reel I -- V I -- V C CE C CE 2.0 --2.0 MCH6102 MCH6202 --8mA --6mA 8mA --1.6 1.6 40mA --1.2 1.2 --0.8 0.8 --2mA --0.4 0.4 I =0mA I =0mA B B 0 0 0 --200 --400 --600 --800 --1000 0 200 400 600 800 1000 Collector-to-Emitter Voltage, V -- mV IT01872 Collector-to-Emitter Voltage, V -- mV IT01873 CE CE No.6480-2/7 2mA --4mA 4mA 20mA 15mA 10mA 6mA --50mA --40mA --30mA --20mA --15mA --10mA 30mA 50mA Collector Current, I -- A C Collector Current, I -- A C

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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