X-On Electronics has gained recognition as a prominent supplier of MJD45H11G Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. MJD45H11G Bipolar Transistors - BJT are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

MJD45H11G ON Semiconductor

MJD45H11G electronic component of ON Semiconductor
MJD45H11G ON Semiconductor
MJD45H11G Bipolar Transistors - BJT
MJD45H11G  Semiconductors

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See Product Specifications
Part No. MJD45H11G
Manufacturer: ON Semiconductor
Category: Bipolar Transistors - BJT
Description: Bipolar (BJT) Transistor PNP 80 V 8 A 90MHz 1.75 W Surface Mount DPAK
Datasheet: MJD45H11G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
82: USD 0.821 ea
Line Total: USD 67.32 
Availability - 1818
Ship by Tue. 08 Jul to Mon. 14 Jul
MOQ: 82  Multiples: 75
Pack Size: 75
Availability Price Quantity
1818
Ship by Tue. 08 Jul to Mon. 14 Jul
MOQ : 82
Multiples : 75
82 : USD 0.821
300 : USD 0.4831
1050 : USD 0.4626
2550 : USD 0.4513
5025 : USD 0.449
7500 : USD 0.4467
10050 : USD 0.4445
15000 : USD 0.4423

1172
Ship by Tue. 08 Jul to Mon. 14 Jul
MOQ : 450
Multiples : 75
450 : USD 0.6201
450 : USD 0.6045
525 : USD 0.5889
1050 : USD 0.4937

528
Ship by Tue. 15 Jul to Fri. 18 Jul
MOQ : 1
Multiples : 1
1 : USD 1.7872
10 : USD 1.4526
30 : USD 0.9648
75 : USD 0.7358
525 : USD 0.6704
975 : USD 0.6349

515
Ship by Fri. 04 Jul to Tue. 08 Jul
MOQ : 3
Multiples : 1
3 : USD 1.3398
10 : USD 1.2068
21 : USD 0.9613
56 : USD 0.9088
750 : USD 0.8736

1164
Ship by Tue. 08 Jul to Mon. 14 Jul
MOQ : 450
Multiples : 75
450 : USD 0.6201

960
Ship by Tue. 08 Jul to Mon. 14 Jul
MOQ : 679
Multiples : 1
679 : USD 0.6906
1000 : USD 0.6369
10000 : USD 0.5679
100000 : USD 0.4758

1818
Ship by Tue. 08 Jul to Mon. 14 Jul
MOQ : 300
Multiples : 75
300 : USD 1.1067
375 : USD 0.7035
1050 : USD 0.6476
2550 : USD 0.6318
5025 : USD 0.6286

1455
Ship by Tue. 08 Jul to Mon. 14 Jul
MOQ : 375
Multiples : 75
375 : USD 0.8223
750 : USD 0.7224
1125 : USD 0.6723
1500 : USD 0.634

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Height
Length
Width
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Product Type
Factory Pack Quantity :
Subcategory
Category
Brand Category
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We are delighted to provide the MJD45H11G from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MJD45H11G and other electronic components in the Bipolar Transistors - BJT category and beyond.

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The MJD45H11G is a T0-220 packaged N-Channel Enhancement Mode Field Effect Transistor from ON Semiconductor. It is typically used in applications where high switching speed is required. It can handle up to 25V drain to source voltage and has a 20A current rating. It also has an integrated diode for protection against reverse bias.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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