X-On Electronics has gained recognition as a prominent supplier of MJD45H11G Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. MJD45H11G Bipolar Transistors - BJT are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

MJD45H11G ON Semiconductor

MJD45H11G electronic component of ON Semiconductor
MJD45H11G ON Semiconductor
MJD45H11G Bipolar Transistors - BJT
MJD45H11G  Semiconductors

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See Product Specifications
Part No. MJD45H11G
Manufacturer: ON Semiconductor
Category: Bipolar Transistors - BJT
Description: Bipolar (BJT) Transistor PNP 80 V 8 A 90MHz 1.75 W Surface Mount DPAK
Datasheet: MJD45H11G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
239: USD 0.5836 ea
Line Total: USD 139.48 
Availability - 1818
Ship by Wed. 14 May to Tue. 20 May
MOQ: 239  Multiples: 75
Pack Size: 75
Availability Price Quantity
1818
Ship by Wed. 14 May to Tue. 20 May
MOQ : 239
Multiples : 75
239 : USD 0.5836
300 : USD 0.5189
1050 : USD 0.4928
2550 : USD 0.4751
5025 : USD 0.464
7500 : USD 0.457
10050 : USD 0.4501
15000 : USD 0.4433

1463
Ship by Wed. 14 May to Tue. 20 May
MOQ : 358
Multiples : 75
358 : USD 0.7504
391 : USD 0.6863
525 : USD 0.6168
1050 : USD 0.508
2400 : USD 0.503
4800 : USD 0.4838

800
Ship by Wed. 21 May to Mon. 26 May
MOQ : 1
Multiples : 1
1 : USD 1.7844
10 : USD 1.4484
30 : USD 0.9612
75 : USD 0.7324
525 : USD 0.666
975 : USD 0.6309

226
Ship by Mon. 12 May to Wed. 14 May
MOQ : 3
Multiples : 1
3 : USD 1.2922
10 : USD 1.1676
20 : USD 0.931
55 : USD 0.8792
750 : USD 0.8456

1309
Ship by Wed. 14 May to Tue. 20 May
MOQ : 358
Multiples : 75
358 : USD 0.7504
391 : USD 0.6863
525 : USD 0.6168
1050 : USD 0.508
2400 : USD 0.503
4800 : USD 0.4838

960
Ship by Wed. 14 May to Tue. 20 May
MOQ : 611
Multiples : 1
611 : USD 0.7925

1818
Ship by Wed. 14 May to Tue. 20 May
MOQ : 368
Multiples : 75
368 : USD 0.7307
383 : USD 0.7015
1050 : USD 0.6406
2550 : USD 0.6176
5025 : USD 0.6032

1527
Ship by Wed. 14 May to Tue. 20 May
MOQ : 321
Multiples : 75
321 : USD 0.8376
750 : USD 0.736
1125 : USD 0.6849
1500 : USD 0.6459

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Height
Length
Width
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Product Type
Factory Pack Quantity :
Subcategory
Category
Brand Category
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We are delighted to provide the MJD45H11G from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MJD45H11G and other electronic components in the Bipolar Transistors - BJT category and beyond.

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The MJD45H11G is a T0-220 packaged N-Channel Enhancement Mode Field Effect Transistor from ON Semiconductor. It is typically used in applications where high switching speed is required. It can handle up to 25V drain to source voltage and has a 20A current rating. It also has an integrated diode for protection against reverse bias.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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