MJE13009G ON Semiconductor

MJE13009G SWITCHMODE Series NPN Silicon Power Transistors The MJE13009G is designed for highvoltage, highspeed power switching inductive circuits where fall time is critical. They are MJE13009G ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) C Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS (Note 2) CollectorEmitter Sustaining Voltage V 400 Vdc CEO(sus) (I = 10 mA, I = 0) C B Collector Cutoff Current I mAdc CEV (V = Rated Value, V = 1.5 Vdc) CEV BE(off) 1 (V = Rated Value, V = 1.5 Vdc, T = 100 C) CEV BE(off) C 5 Emitter Cutoff Current I 1 mAdc EBO (V = 9 Vdc, I = 0) EB C SECOND BREAKDOWN Second Breakdown Collector Current with base forward biased I See Figure 1 S/b Clamped Inductive SOA with Base Reverse Biased See Figure 2 ON CHARACTERISTICS (Note 2) DC Current Gain h FE (I = 5 Adc, V = 5 Vdc) C CE 8 40 (I = 8 Adc, V = 5 Vdc) C CE 6 30 CollectorEmitter Saturation Voltage V Vdc CE(sat) (I = 5 Adc, I = 1 Adc) C B 1 (I = 8 Adc, I = 1.6 Adc) C B 1.5 (I = 12 Adc, I = 3 Adc) C B 3 (I = 8 Adc, I = 1.6 Adc, T = 100 C) C B C 2 BaseEmitter Saturation Voltage V Vdc BE(sat) (I = 5 Adc, I = 1 Adc) C B 1.2 (I = 8 Adc, I = 1.6 Adc) C B 1.6 (I = 8 Adc, I = 1.6 Adc, T = 100 C) C B C 1.5 DYNAMIC CHARACTERISTICS CurrentGain Bandwidth Product f 4 MHz T (I = 500 mAdc, V = 10 Vdc, f = 1 MHz) C CE Output Capacitance C 180 pF ob (V = 10 Vdc, I = 0, f = 0.1 MHz) CB E SWITCHING CHARACTERISTICS Resistive Load (Table 1) Delay Time t 0.06 0.1 s d (V = 125 Vdc, I = 8 A, CC C Rise Time t 0.45 1 s r I = I = 1.6 A, t = 25 s, B1 B2 p Storage Time t 1.3 3 s s Duty Cycle 1%) Fall Time t 0.2 0.7 s f Inductive Load, Clamped (Table 1, Figure 13) Voltage Storage Time t 0.92 2.3 s sv (I = 8 A, V = 300 Vdc, C clamp I = 1.6 A, V = 5 Vdc, T = 100 C) Crossover Time B1 BE(off) C t 0.12 0.7 s c 2. Pulse Test: Pulse Width = 300 s, Duty Cycle = 2%.