MJF31C (NPN), MJF32C (PNP) Preferred Device Complementary Silicon Plastic Power Transistors for Isolated Package MJF31C (NPN), MJF32C (PNP) ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) C Characteristic Symbol Min Max Unit OFF CHARACTERISTICS CollectorEmitter Sustaining Voltage (Note 2) V Vdc CEO(sus) (I = 30 mAdc, I = 0) C B 100 Collector Cutoff Current I mAdc CEO (I = 3.0 Adc, V = 4.0 Vdc) 0.3 C CE Collector Cutoff Current I 200 Adc CES Emitter Cutoff Current (V = 5.0 Vdc, I = 0) I 1.0 mAdc BE C EBO ON CHARACTERISTICS (Note 2) DC Current Gain (I = 1.0 Adc, V = 4.0 Vdc) h 25 C CE FE (I = 3.0 Adc, V = 4.0 Vdc) 10 50 C CE CollectorEmitter Saturation Voltage (I = 3.0 Adc, I = 375 mAdc) V 1.2 Vdc C B CE(sat) BaseEmitter On Voltage (I = 3.0 Adc, V = 4.0 Vdc) V 1.8 Vdc C CE BE(on) DYNAMIC CHARACTERISTICS CurrentGain Bandwidth Product (I = 500 mAdc, V = 10 Vdc, f = 1.0 MHz) f 3.0 MHz C CE test T SmallSignal Current Gain (I = 0.5 Adc, V = 10 Vdc, f = 1.0 kHz) h 20 C CE fe 2. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. T T C A 40 4.0 30 3.0 T C 20 2.0 T A 10 1.0 0 0 0 20 40 60 80 100 120 140 160 T, TEMPERATURE (C) Figure 1. Power Derating TURN-ON PULSE V CC APPROX 2.0 R C +11 V I /I = 10 C B 1.0 T = 25C J SCOPE V in 0.7 V 0 in t V = 30 V R r CC B 0.5 V EB(off) t 1 0.3 t V = 10 V C << C r CC jd eb t 3 APPROX - 4.0 V +11 V t 7.0 ns 1 0.1 100 < t < 500 s 2 0.07 V t < 15 ns in 3 t V = 2.0 V d EB(off) 0.05 0.03 t DUTY CYCLE 2.0% 2 0.02 APPROX - 9.0 V TURN-OFF PULSE 0.03 0.05 0.07 0.1 0.3 0.5 0.7 1.0 3.0 R and R VARIED TO OBTAIN DESIRED CURRENT LEVELS I , COLLECTOR CURRENT (AMP) B C C Figure 2. Switching Time Equivalent Circuit Figure 3. TurnOn Time