MMBT3906LT1H ON Semiconductor

MMBT3906LT1H electronic component of ON Semiconductor
MMBT3906LT1H ON Semiconductor
MMBT3906LT1H Bipolar Transistors - BJT
MMBT3906LT1H  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of MMBT3906LT1H Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. MMBT3906LT1H Bipolar Transistors - BJT are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

Part No. MMBT3906LT1H
Manufacturer: ON Semiconductor
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT SS SOT23 GP XSTR PBFREE
Datasheet: MMBT3906LT1H Datasheet (PDF)
Price (USD)
1: USD 0.2 ea
Line Total: USD 0.2 
Availability : 16902
  
Ship by Thu. 06 Nov to Mon. 10 Nov
QtyUnit Price
1$ 0.2
10$ 0.125
100$ 0.0775
500$ 0.0517
1000$ 0.044
3000$ 0.0352
6000$ 0.0308
9000$ 0.0253
24000$ 0.0231

Availability 16902
Ship by Thu. 06 Nov to Mon. 10 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.2
10$ 0.125
100$ 0.0775
500$ 0.0517
1000$ 0.044
3000$ 0.0352
6000$ 0.0308
9000$ 0.0253
24000$ 0.0231

   
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We are delighted to provide the MMBT3906LT1H from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MMBT3906LT1H and other electronic components in the Bipolar Transistors - BJT category and beyond.

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MMBT3906L, SMMBT3906L General Purpose Transistor PNP Silicon Features S Prefix for Automotive and Other Applications Requiring Unique MMBT3906L, SMMBT3906L ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector Emitter Breakdown Voltage V Vdc (BR)CEO (I = 1.0 mAdc, I = 0) 40 C B Collector Base Breakdown Voltage V Vdc (BR)CBO (I = 10 Adc, I = 0) 40 C E Emitter Base Breakdown Voltage V Vdc (BR)EBO (I = 10 Adc, I = 0) 5.0 E C Base Cutoff Current I nAdc BL (V = 30 Vdc, V = 3.0 Vdc) 50 CE EB Collector Cutoff Current I nAdc CEX (V = 30 Vdc, V = 3.0 Vdc) 50 CE EB ON CHARACTERISTICS (Note 4) DC Current Gain H FE (I = 0.1 mAdc, V = 1.0 Vdc) 60 C CE (I = 1.0 mAdc, V = 1.0 Vdc) 80 C CE (I = 10 mAdc, V = 1.0 Vdc) 100 300 C CE (I = 50 mAdc, V = 1.0 Vdc) 60 C CE (I = 100 mAdc, V = 1.0 Vdc) 30 C CE Collector Emitter Saturation Voltage V Vdc CE(sat) (I = 10 mAdc, I = 1.0 mAdc) 0.25 C B (I = 50 mAdc, I = 5.0 mAdc) 0.4 C B Base Emitter Saturation Voltage V Vdc BE(sat) (I = 10 mAdc, I = 1.0 mAdc) 0.65 0.85 C B (I = 50 mAdc, I = 5.0 mAdc) 0.95 C B SMALLSIGNAL CHARACTERISTICS Current Gain Bandwidth Product f MHz T (I = 10 mAdc, V = 20 Vdc, f = 100 MHz) 250 C CE Output Capacitance C pF obo (V = 5.0 Vdc, I = 0, f = 1.0 MHz) 4.5 CB E Input Capacitance C pF ibo (V = 0.5 Vdc, I = 0, f = 1.0 MHz) 10 EB C Input Impedance h k ie (I = 1.0 mAdc, V = 10 Vdc, f = 1.0 kHz) 2.0 12 C CE 4 Voltage Feedback Ratio h X 10 re (I = 1.0 mAdc, V = 10 Vdc, f = 1.0 kHz) 0.1 10 C CE Small Signal Current Gain h fe (I = 1.0 mAdc, V = 10 Vdc, f = 1.0 kHz) 100 400 C CE Output Admittance h mhos oe (I = 1.0 mAdc, V = 10 Vdc, f = 1.0 kHz) 3.0 60 C CE Noise Figure NF dB (I = 100 Adc, V = 5.0 Vdc, R = 1.0 k , f = 1.0 kHz) 4.0 C CE S SWITCHING CHARACTERISTICS Delay Time t 35 d (V = 3.0 Vdc, V = 0.5 Vdc, CC BE ns I = 10 mAdc, I = 1.0 mAdc) C B1 Rise Time t 35 r Storage Time t 225 s (V = 3.0 Vdc, I = 10 mAdc, CC C ns I = I = 1.0 mAdc) B1 B2 Fall Time t 75 f 4. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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