MPSA42 / MMBTA42 / PZTA42 NPN High Voltage Amplifier October 2009 MPSA42 / MMBTA42 / PZTA42 NPN High Voltage Amplifier Features This device is designed for application as a video output to drive color CRT and other high voltage applications. Sourced from Process 48. MPSA42 MMBTA42 PZTA42 C C E E C B B SOT-23 TO-92 SOT-223 E B C Mark: 1D Absolute Maximum Ratings* T = 25C unless otherwise noted A Symbol Parameter Value Units V Collector-Emitter Voltage 300 V CEO V Collector-Base Voltage 300 V CBO V Emitter-Base Voltage 6 V EBO I Collector Current - Continuous 500 mA C T , T Operating and Storage Junction Temperature Range -55 to +150 C J STG * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics T =25C unless otherwise noted A Max Symbol Parameter Units MPSA42 *MMBTA42 **PZTA42 P Total Device Dissipation 625 240 1000 mW D Derate above 25C 5.0 1.92 8.0 mW/C R Thermal Resistance, Junction to Case 83.3 C/W JC R Thermal Resistance, Junction to Ambient 200 515 125 C/W JA * Device mounted on FR-4PCB 1.6 1.6 0.06. 2 ** Device mounted on FR-4 PCB 36 mm 18 mm 1.5 mm mounting pad for the collector lead min. 6 cm . 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com MPSA42 / MMBTA42 / PZTA42 Rev. B2 1 MPSA42 / MMBTA42 / PZTA42 NPN High Voltage Amplifier Electrical Characteristics T =25C unless otherwise noted A Symbol Parameter Test Condition Min. Max. Units Off Characteristics V Collector-Emitter Breakdown Voltage* I = 1.0 mA, I = 0 300 V (BR)CEO C B V Collector-Base Breakdown Voltage I = 100 A, I = 0 300 V (BR)CBO C E V Emitter-Base Breakdown Voltage I = 100 A, I = 0 6 V (BR)EBO E C I Collector-Cutoff Current V = 200 V, I = 0 0.1 A CBO CB E I Emitter-Cutoff Current V = 6 V, I = 0 0.1 A EBO EB C On Characteristics* V = 10 V, I = 1.0 mA 25 CE C h DC Current Gain V = 10 V, I = 10 mA 40 FE CE C V = 10 V, I = 30 mA 40 CE C V Collector-Emitter Saturation Voltage I = 20 mA, I = 2.0 mA 0.5 V CE(sat) C B V Base-Emitter On Voltage I = 20 mA, I = 2.0 mA 0.9 V BE(sat) C B Small Signal Characteristics f Current Gain Bandwidth Product I = 10mA, V = 20V, f = 100MHz 50 MHz T C CE Ccb Collector-Base Capacitance V = 20 V, I = 0, f = 1.0 MHz 3.0 pF CB E * Pulse Test: Pulse Width300s, Duty Cycle2% 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com MPSA42 / MMBTA42 / PZTA42 Rev. B2 2