X-On Electronics has gained recognition as a prominent supplier of MSB1218A-RT1G Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. MSB1218A-RT1G Bipolar Transistors - BJT are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

MSB1218A-RT1G ON Semiconductor

MSB1218A-RT1G electronic component of ON Semiconductor
MSB1218A-RT1G ON Semiconductor
MSB1218A-RT1G Bipolar Transistors - BJT
MSB1218A-RT1G  Semiconductors

Images are for reference only
See Product Specifications
Part No. MSB1218A-RT1G
Manufacturer: ON Semiconductor
Category: Bipolar Transistors - BJT
Description: ON Semiconductor Bipolar Transistors - BJT 100mA 45V PNP
Datasheet: MSB1218A-RT1G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
13275: USD 0.0354 ea
Line Total: USD 469.94 
Availability - 32010
Ship by Wed. 02 Jul to Tue. 08 Jul
MOQ: 13275  Multiples: 1
Pack Size: 1
Availability Price Quantity
34920
Ship by Wed. 02 Jul to Tue. 08 Jul
MOQ : 13275
Multiples : 1
13275 : USD 0.0354
100000 : USD 0.0295

34920
Ship by Wed. 02 Jul to Tue. 08 Jul
MOQ : 13275
Multiples : 1
13275 : USD 0.0354
100000 : USD 0.0295

29100
Ship by Wed. 02 Jul to Tue. 08 Jul
MOQ : 13275
Multiples : 1
13275 : USD 0.0354
100000 : USD 0.0295

32010
Ship by Wed. 02 Jul to Tue. 08 Jul
MOQ : 13275
Multiples : 1
13275 : USD 0.0354
100000 : USD 0.0295

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Brand
Dc Collector/Base Gain Hfe Min
Factory Pack Quantity :
LoadingGif
 
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We are delighted to provide the MSB1218A-RT1G from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MSB1218A-RT1G and other electronic components in the Bipolar Transistors - BJT category and beyond.

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MSB1218A--RT1G PNP Silicon General Purpose Amplifier Transistor ThisPNPSiliconEpitaxialPlanarTransistorisdesignedforgeneral purpose amplifier applications. This device is housed in the SC--70/SOT--323 package which is designed for low power surface MSB1218A--RT1G 250 T =25C A 120 200 150 90 300mA 250 200 100 60 150 R =833C/W JA 100 50 30 I =50mA B 0 0 --50 0 50 100 150 0 36 9 12 15 T ,AMBIENTTEMPERATURE(C) V ,COLLECTORVOLTAGE(V) A CE Figure1.DeratingCurve Figure2.I -- V C CE 1000 2 V =10V CE T =25C A T =25C A T =75C A 1.5 T =--25C A 100 1 0.5 10 0 0.1 1 10 100 0.01 0.1 1 10 100 I ,COLLECTORCURRENT(mA) I ,BASECURRENT(mA) C B Figure3.DCCurrentGain Figure4.CollectorSaturationRegion 900 13 800 12 700 11 600 10 500 400 9 300 8 T =25C A 200 V =5V CE 7 100 0 6 0.2 0.5 1 5 10 20 40 60 80 100 150 200 0 12 3 4 I ,COLLECTORCURRENT(mA) V (V) C EB Figure5.OnVoltage Figure6.Capacitance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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