X-On Electronics has gained recognition as a prominent supplier of NSS40301MDR2G Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. NSS40301MDR2G Bipolar Transistors - BJT are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

NSS40301MDR2G ON Semiconductor

NSS40301MDR2G electronic component of ON Semiconductor
NSS40301MDR2G ON Semiconductor
NSS40301MDR2G Bipolar Transistors - BJT
NSS40301MDR2G  Semiconductors

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See Product Specifications
Part No. NSS40301MDR2G
Manufacturer: ON Semiconductor
Category: Bipolar Transistors - BJT
Description: Transistors Bipolar - BJT MATCHED LO VCE(SAT) SOIC8
Datasheet: NSS40301MDR2G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.1087 ea
Line Total: USD 1.11 
Availability - 14799
Ship by Mon. 16 Jun to Wed. 18 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
39
Ship by Wed. 25 Jun to Mon. 30 Jun
MOQ : 1
Multiples : 1
1 : USD 1.3932
10 : USD 1.3634
30 : USD 0.9076
100 : USD 0.8947

14799
Ship by Mon. 16 Jun to Wed. 18 Jun
MOQ : 1
Multiples : 1
1 : USD 1.1087
10 : USD 0.786
25 : USD 0.7212
100 : USD 0.5236
250 : USD 0.5137
500 : USD 0.4367
1000 : USD 0.3971
2500 : USD 0.3498
5000 : USD 0.3498

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Qualification
Series
Packaging
Dc Current Gain Hfe Max
Brand
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
Height
Length
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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We are delighted to provide the NSS40301MDR2G from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NSS40301MDR2G and other electronic components in the Bipolar Transistors - BJT category and beyond.

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NSS40301MDR2G Dual Matched 40 V, 6.0 A, Low V NPN Transistor CE(sat) 2 These transistors are part of the ON Semiconductor e PowerEdge family of Low V transistors. They are assembled to create a pair CE(sat) of devices highly matched in all parameters, including ultra low saturation voltage V , high current gain and Base/Emitter turn on CE(sat) NSS40301MDR2G THERMAL CHARACTERISTICS Characteristic Symbol Max Unit SINGLE HEATED Total Device Dissipation (Note 1) P 576 mW D T = 25C A Derate above 25C 4.6 mW/C Thermal Resistance, JunctiontoAmbient (Note 1) 217 C/W R JA Total Device Dissipation (Note 2) P 676 mW D T = 25C A Derate above 25C 5.4 mW/C Thermal Resistance, JunctiontoAmbient (Note 2) 185 C/W R JA DUAL HEATED (Note 3) Total Device Dissipation (Note 1) P 653 mW D T = 25C A Derate above 25C 5.2 mW/C Thermal Resistance, JunctiontoAmbient (Note 1) R 191 C/W JA Total Device Dissipation (Note 2) P 783 mW D T = 25C A Derate above 25C 6.3 mW/C Thermal Resistance, JunctiontoAmbient (Note 2) R 160 C/W JA Junction and Storage Temperature Range T , T 55 to +150 C J stg 2 1. FR4 10 mm , 1 oz. copper traces, still air. 2 2. FR4 100 mm , 1 oz. copper traces, still air. 3. Dual heated values assume total power is the sum of two equally powered devices.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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