X-On Electronics has gained recognition as a prominent supplier of NST847BF3T5G Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. NST847BF3T5G Bipolar Transistors - BJT are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

NST847BF3T5G ON Semiconductor

NST847BF3T5G electronic component of ON Semiconductor
NST847BF3T5G ON Semiconductor
NST847BF3T5G Bipolar Transistors - BJT
NST847BF3T5G  Semiconductors

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See Product Specifications
Part No. NST847BF3T5G
Manufacturer: ON Semiconductor
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT SNGL NPN GP TRANS
Datasheet: NST847BF3T5G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.3488 ea
Line Total: USD 0.35 
Availability - 15410
Ship by Thu. 12 Jun to Mon. 16 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
15410
Ship by Thu. 12 Jun to Mon. 16 Jun
MOQ : 1
Multiples : 1
1 : USD 0.3488
10 : USD 0.2225
100 : USD 0.102
1000 : USD 0.0781
2500 : USD 0.0759
8000 : USD 0.0616
24000 : USD 0.0605
48000 : USD 0.0583

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Qualification
Series
Packaging
Dc Current Gain Hfe Max
Height
Length
Width
Brand
Dc Collector/Base Gain Hfe Min
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the NST847BF3T5G from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NST847BF3T5G and other electronic components in the Bipolar Transistors - BJT category and beyond.

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NST847BF3T5G NPN General Purpose Transistor The NST847BF3T5G device is a spin off of our popular SOT 23/SOT323/SOT563/SOT963 threeleaded device. It is designed for general purpose amplifier applications and is housed in NST847BF3T5G ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector Emitter Breakdown Voltage (I = 10 mA) V 45 V C (BR)CEO Collector Emitter Breakdown Voltage (I = 10 A, V = 0) V 50 V C EB (BR)CES V 50 V Collector Base Breakdown Voltage (I = 10 A) C (BR)CBO Emitter Base Breakdown Voltage (I = 1.0 A) V 6.0 V (BR)EBO E Collector Cutoff Current (V = 30 V) I 15 nA CB CBO (V = 30 V, T = 150C) 5.0 A CB A ON CHARACTERISTICS DC Current Gain h FE (I = 10 A, V = 5.0 V) 150 C CE (I = 2.0 mA, V = 5.0 V) 200 290 450 C CE Collector Emitter Saturation Voltage (I = 10 mA, I = 0.5 mA) V 0.25 V C B CE(sat) Collector Emitter Saturation Voltage (I = 100 mA, I = 5.0 mA) 0.6 C B Base Emitter Saturation Voltage (I = 10 mA, I = 0.5 mA) V 0.7 V C B BE(sat) Base Emitter Saturation Voltage (I = 100 mA, I = 5.0 mA) 0.9 C B Base Emitter Voltage (I = 2.0 mA, V = 5.0 V) V 580 660 700 mV C CE BE(on) Base Emitter Voltage (I = 10 mA, V = 5.0 V) 770 C CE SMALLSIGNAL CHARACTERISTICS Current Gain Bandwidth Product f 100 MHz T (I = 10 mA, V = 5.0 Vdc, f = 100 MHz) C CE Output Capacitance (V = 10 V, f = 1.0 MHz) C 4.5 pF CB obo Input Capacitance (V = 0.5 V, I = 0 mA, f = 1.0 MHz) C 10 pF EB C ibo Noise Figure NF 10 dB (I = 0.2 mA, V = 5.0 Vdc, R = 2.0 k , f = 1.0 kHz, BW = 200 Hz) C CE S 0.18 600 150C (5.0 V) I /I = 10 C B 0.16 500 150C (1.0 V) 0.14 400 0.12 V = 150C CE(sat) 25C (5.0 V) 0.10 300 25C (1.0 V) 0.08 55C (5.0 V) 25C 200 0.06 55C (1.0 V) 100 0.04 55C 0 0.02 0.0001 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 I , COLLECTOR CURRENT (A) I , COLLECTOR CURRENT (A) C C Figure 1. Collector Emitter Saturation Voltage vs. Figure 2. DC Current Gain vs. Collector Current Collector Current

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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