X-On Electronics has gained recognition as a prominent supplier of NSVMMUN2113LT3G BIPOLAR TRANSISTORS - BJT across the USA, India, Europe, Australia, and various other global locations. NSVMMUN2113LT3G BIPOLAR TRANSISTORS - BJT are a product manufactured by ON Semiconductor. We provide cost-effective solutions for BIPOLAR TRANSISTORS - BJT, ensuring timely deliveries around the world.

NSVMMUN2113LT3G ON Semiconductor

NSVMMUN2113LT3G electronic component of ON Semiconductor
Images are for reference only
See Product Specifications
Part No.NSVMMUN2113LT3G
Manufacturer: ON Semiconductor
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT SS SOT23 BR XSTR PNP 50V
Datasheet: NSVMMUN2113LT3G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.0338 ea
Line Total: USD 0.03

Availability - 7081
Ships to you between
Fri. 21 Jun to Thu. 27 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
7081 - WHS 1


Ships to you between Fri. 21 Jun to Thu. 27 Jun

MOQ : 1
Multiples : 1
1 : USD 0.0338

7081 - WHS 2


Ships to you between Fri. 21 Jun to Thu. 27 Jun

MOQ : 222
Multiples : 1
222 : USD 0.0338

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Qualification
Packaging
Brand
Dc Collector/Base Gain Hfe Min
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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We are delighted to provide the NSVMMUN2113LT3G from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NSVMMUN2113LT3G and other electronic components in the Bipolar Transistors - BJT category and beyond.

MUN2113, MMUN2113L, MUN5113, DTA144EE, DTA144EM3, NSBA144EF3 Digital Transistors (BRT) R1 = 47 k , R2 = 47 k www.onsemi.com PNP Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network PIN 3 COLLECTOR This series of digital transistors is designed to replace a single (OUTPUT) PIN 1 device and its external resistor bias network. The Bias Resistor R1 BASE Transistor (BRT) contains a single transistor with a monolithic bias (INPUT) R2 network consisting of two resistors a series base resistor and a base emitter resistor. The BRT eliminates these individual components by PIN 2 integrating them into a single device. The use of a BRT can reduce EMITTER (GROUND) both system cost and board space. Features MARKING DIAGRAMS Simplifies Circuit Design Reduces Board Space SC59 XX M CASE 318D Reduces Component Count STYLE 1 S and NSV Prefix for Automotive and Other Applications Requiring 1 Unique Site and Control Change Requirements AEC-Q101 Qualified and PPAP Capable SOT23 These Devices are PbFree, Halogen Free/BFR Free and are RoHS XXX M CASE 318 Compliant STYLE 6 1 MAXIMUM RATINGS (T = 25C) A Rating Symbol Max Unit SC70/SOT323 XX M CASE 419 CollectorBase Voltage V 50 Vdc CBO STYLE 3 CollectorEmitter Voltage V 50 Vdc 1 CEO Collector Current Continuous I 100 mAdc C SC75 XX M CASE 463 Input Forward Voltage V 40 Vdc IN(fwd) STYLE 1 1 Input Reverse Voltage V 10 Vdc IN(rev) Stresses exceeding those listed in the Maximum Ratings table may damage the SOT723 device. If any of these limits are exceeded, device functionality should not be XX M CASE 631AA assumed, damage may occur and reliability may be affected. STYLE 1 1 SOT1123 X M CASE 524AA 1 STYLE 1 XXX = Specific Device Code M = Date Code* =PbFree Package (Note: Microdot may be in either location) *Date Code orientation may vary depending up- on manufacturing location. ORDERING INFORMATION See detailed ordering, marking, and shipping information in the package dimensions section on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2012 1 Publication Order Number: October, 2016 Rev. 5 DTA144E/DMUN2113, MMUN2113L, MUN5113, DTA144EE, DTA144EM3, NSBA144EF3 Table 1. ORDERING INFORMATION Device Part Marking Package Shipping MUN2113T1G, SMUN2113T1G* 6C SC59 3000 / Tape & Reel (PbFree) MMUN2113LT1G, SMMUN2113LT1G* A6C SOT23 3000 / Tape & Reel (PbFree) MMUN2113LT3G, NSVMMUN2113LT3G* A6C SOT23 10000 / Tape & Reel (PbFree) MUN5113T1G, SMUN5113T1G* 6C SC70/SOT323 3000 / Tape & Reel (PbFree) MUN5113T3G 6C SC70/SOT323 10000 / Tape & Reel (PbFree) DTA144EET1G, NSVDTA144EET1G* 6C SC75 3000 / Tape & Reel (PbFree) DTA144EM3T5G 6C SOT723 8000 / Tape & Reel (PbFree) NSBA144EF3T5G E SOT1123 8000 / Tape & Reel (PbFree) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 300 250 (1) SC75 and SC70/SOT323 Minimum Pad 200 (2) SC59 Minimum Pad (1) (2) (3) (4) (5) (3) SOT23 Minimum Pad 150 2 (4) SOT1123 100 mm , 1 oz. copper trace (5) SOT723 Minimum Pad 100 50 0 50 25 0 25 50 75 100 125 150 AMBIENT TEMPERATURE (C) Figure 1. Derating Curve www.onsemi.com 2 P , POWER DISSIPATION (mW) D

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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