NSVMSA1162GT1G ON Semiconductor

NSVMSA1162GT1G electronic component of ON Semiconductor
NSVMSA1162GT1G ON Semiconductor
NSVMSA1162GT1G Bipolar Transistors - BJT
NSVMSA1162GT1G  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of NSVMSA1162GT1G Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. NSVMSA1162GT1G Bipolar Transistors - BJT are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

Part No. NSVMSA1162GT1G
Manufacturer: ON Semiconductor
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT SS SC59 XSTR PNP 45V TR
Datasheet: NSVMSA1162GT1G Datasheet (PDF)
Price (USD)
1: USD 0.475 ea
Line Total: USD 0.48 
Availability : 2909
  
Ship by Thu. 13 Nov to Mon. 17 Nov
QtyUnit Price
1$ 0.475
10$ 0.4338
100$ 0.2749
500$ 0.1771
1000$ 0.1397
3000$ 0.0704
6000$ 0.0649
9000$ 0.0572
24000$ 0.055

Availability 2909
Ship by Thu. 13 Nov to Mon. 17 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.475
10$ 0.4338
100$ 0.2749
500$ 0.1771
1000$ 0.1397
3000$ 0.0704
6000$ 0.0649
9000$ 0.0572
24000$ 0.055

   
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We are delighted to provide the NSVMSA1162GT1G from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NSVMSA1162GT1G and other electronic components in the Bipolar Transistors - BJT category and beyond.

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MSA1162GT1G General Purpose Amplifier Transistors PNP Surface Mount Features MSA1162GT1G TYPICAL ELECTRICAL CHARACTERISTICS 200 1000 1.5 mA 2.0 mA 160 1.0 mA T = 100C A 120 25C 25C 0.5 mA 100 80 I = 0.2 mA B 40 T = 25C A V = 1.0 V CE 0 10 0 1 2 3 4 5 6 1 10 100 1000 V , COLLECTOREMITTER VOLTAGE (V) I , COLLECTOR CURRENT (mA) CE C Figure 1. Collector Saturation Region Figure 2. DC Current Gain 1000 1 I /I = 10 C B T = 100C A T = 100C A 25C 25C 25C 25C 100 0.1 V = 6.0 V CE 10 0.01 1 10 100 1000 1 10 100 1000 I , COLLECTOR CURRENT (mA) I , COLLECTOR CURRENT (mA) C C Figure 3. DC Current Gain Figure 4. V versus I CE(sat) C 10 10,000 COMMON EMITTER 25C V = 6 V CE T = 100C A 1000 25C 100 1 10 1 T = 25C A I /I = 10 C B 0.1 0.1 1 10 100 1000 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 I , COLLECTOR CURRENT (mA) V , BASEEMITTER VOLTAGE (V) C BE Figure 5. V versus I Figure 6. Base Emitter Voltage BE(sat) C

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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