MSB92T1G PNP Silicon General Purpose High Voltage Transistor MSB92T1G ELECTRICAL CHARACTERISTICS Characteristic Symbol Min Max Unit Collector-Emitter Breakdown Voltage V 300 Vdc (BR)CEO (I = 1.0 mAdc, I = 0) C B Collector-Base Breakdown Voltage V 300 Vdc (BR)CBO (I = 100 Adc, I = 0) C E Emitter-Base Breakdown Voltage V 5.0 Vdc (BR)EBO (I = 100 Adc, I = 0) E E Collector-Base Cutoff Current I 0.25 A CBO (V = 200 Vdc, I = 0) CB E EmitterBase Cutoff Current I 0.1 A EBO (V = 3.0 Vdc, I = 0) EB B DC Current Gain (Note 2) (V = 10 Vdc, I = 1.0 mAdc) h 25 CE C FE1 (V = 10 Vdc, I = 10 mAdc) h 40 CE C FE2 (V = 10 Vdc, I = 30 mAdc) h 25 CE C FE3 Collector-Emitter Saturation Voltage V 0.5 Vdc CE(sat) (I = 20 mAdc, I = 2.0 mAdc) C B BaseEmitter Saturation Voltage V 0.9 Vdc BE(sat) (I = 20 mAdc, I = 2.0 mAdc) C B SMALL SIGNAL CHARACTERISTICS Current Gain Bandwidth Product f 50 MHz T (I = 10 mAdc, V = 20 Vdc, f = 20 MHz) C CE CollectorBase Capacitance C 6.0 pF cb (V = 20 Vdc, I = 0, f = 1.0 MHz) CB E 2. Pulse Test: Pulse Width 300 s, D.C. 2%.