NST65010MW6 Dual Matched General Purpose Transistor PNP Matched Pair These transistors are housed in an ultrasmall SOT363 package ideally suited for portable products. They are assembled to create a www.onsemi.com pair of devices highly matched in all parameters, eliminating the need for costly trimming. Applications are Current Mirrors Differential, 6 Sense and Balanced Amplifiers Mixers Detectors and Limiters. 1 Complementary NPN equivalent NST65011MW6T1G is available. SOT363 Features CASE 419B Current Gain Matching to 10% STYLE 1 BaseEmitter Voltage Matched to 2 mV DropIn Replacement for Standard Device (3) (2) (1) NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AECQ101 Qualified and PPAP Capable Q Q 1 2 These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant (4) (5) (6) MAXIMUM RATINGS Rating Symbol Value Unit MARKING DIAGRAMS CollectorEmitter Voltage V 65 V CEO CollectorBase Voltage V 80 V CBO 4G M EmitterBase Voltage V 5.0 V EBO Collector Current Continuous I 100 mAdc C Stresses exceeding those listed in the Maximum Ratings table may damage the 4G = Device Code device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. M = Date Code = PbFree Package (Note: Microdot may be in either location) THERMAL CHARACTERISTICS Characteristic Symbol Max Unit ORDERING INFORMATION Total Device Dissipation P 380 mW D Per Device 250 Device Package Shipping FR5 Board (Note 1) T = 25C A NST65010MW6T1G SOT363 3000 / Derate Above 25C 3.0 mW/C (PbFree) Tape & Reel Thermal Resistance, 328 C/W R JA NSVT65010MW6T1G SOT363 3000 / Junction to Ambient (PbFree) Tape & Reel Junction and Storage T , T 55 to +150 C J stg For information on tape and reel specifications, Temperature Range including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications 1. FR5 = 1.0 x 0.75 x 0.062 in. Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: July, 2015 Rev. 0 NST65010MW6/DNST65010MW6 ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS CollectorEmitter Breakdown Voltage, (I = 10 mA) V 65 V C (BR)CEO CollectorEmitter Breakdown Voltage, (I = 10 A, V = 0) V 80 V C EB (BR)CES CollectorBase Breakdown Voltage, (I = 10 A) V 80 V C (BR)CBO EmitterBase Breakdown Voltage, (I = 1.0 A) V 5.0 V E (BR)EBO Collector Cutoff Current (V = 30 V) I 15 nA CB CBO 5.0 A Collector Cutoff Current (V = 30 V, T = 150C) CB A ON CHARACTERISTICS DC Current Gain h FE (I = 10 A, V = 5.0 V) 150 C CE (I = 2.0 mA, V = 5.0 V) 220 290 475 C CE h h 0.9 1.0 1.1 (I = 2.0 mA, V = 5.0 V) (Note 2) C CE FE(1)/ FE(2) CollectorEmitter Saturation Voltage V mV CE(sat) (I = 10 mA, I = 0.5 mA) 300 C B (I = 100 mA, I = 5.0 mA) 650 C B BaseEmitter Saturation Voltage V mV BE(sat) (I = 10 mA, I = 0.5 mA) 700 C B (I = 100 mA, I = 5.0 mA) 900 C B BaseEmitter On Voltage V mV BE(on) (I = 2.0 mA, V = 5.0 V) 600 750 C CE (I = 10 mA, V = 5.0 V) 820 C CE (I = 2.0 mA, V = 5.0 V) (Note 3) V V 1.0 2.0 C CE BE(1) BE(2) SMALLSIGNAL CHARACTERISTICS CurrentGain Bandwidth Product, (I = 10 mA, V = 5 Vdc, f = 100 MHz) f 100 MHz C CE T Output Capacitance, (V = 10 V, f = 1.0 MHz) C 4.5 pF CB ob NF 10 dB Noise Figure, (I = 0.2 mA, V = 5 Vdc, R = 2 k , f = 1 kHz, BW = 200Hz) C CE S Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. h /h is the ratio of one transistor compared to the other transistor within the same package. The smaller h is used as numerator. FE(1) FE(2) FE 3. V V is the absolute difference of one transistor compared to the other transistor within the same package. BE(1) BE(2) www.onsemi.com 2