PZTA96ST1G High Voltage Transistor PNP Silicon Features These Devices are PbFree, Halogen Free/BFR Free and are RoHS PZTA96ST1G TYPICAL CHARACTERISTICS 1000 0.4 V = 10 V CE IC/IB = 10 150C 0.3 25C 100 150C 25C 55C 55C 0.2 10 0.1 1 0 0.1 1 10 100 1000 0.1 1 10 100 1000 I , COLLECTOR CURRENT (mA) I , COLLECTOR CURRENT (mA) C C Figure 1. DC Current Gain Figure 2. CollectorEmitter Saturation Voltage 1.0 1.0 0.8 55C 0.8 55C 25C 25C 0.6 0.6 0.4 0.4 150C 150C 0.2 0.2 IC/IB = 10 V = 10 V CE 0 0 0.1 1 10 100 0.1 1 10 100 I , COLLECTOR CURRENT (mA) I , COLLECTOR CURRENT (mA) C C Figure 3. BaseEmitter Saturation Voltage Figure 4. BaseEmitter On Voltage 1000 100 V = 2 V CE Cib 100 10 Cob 10 1 1 0.1 1 10 100 1000 0.1 1 10 100 V , REVERSE VOLTAGE (V) I , COLLECTOR CURRENT (mA) R C Figure 5. Capacitances Figure 6. CurrentGainBandwidth Product