HN1B01FDW1T1G, SHN1B01FDW1T1G Complementary Dual General Purpose Amplifier Transistor www.onsemi.com PNP and NPN Surface Mount Features SC74 High Voltage and High Current: V = 50 V, I = 200 mA CEO C CASE 318F High h : h = 200 400 STYLE 3 FE FE Moisture Sensitivity Level: 1 ESD Rating (6) (5) (4) Human Body Model: 3A Machine Model: C S Prefix for Automotive and Other Applications Requiring Unique Q Q 1 2 Site and Control Change Requirements AECQ101 Qualified and PPAP Capable (1) (2) (3) These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant* MARKING DIAGRAM MAXIMUM RATINGS (T = 25C) A R9 M Rating Symbol Value Unit CollectorBase Voltage V 60 Vdc (BR)CBO CollectorEmitter Voltage V 50 Vdc (BR)CEO R9 = Specific Device Code M EmitterBase Voltage V 7.0 Vdc = Date Code (BR)EBO = PbFree Package Collector Current Continuous I 200 mAdc C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be ORDERING INFORMATION assumed, damage may occur and reliability may be affected. Device Package Shipping THERMAL CHARACTERISTICS HN1B01FDW1T1G SC74 3,000/Tape & Reel Characteristic Symbol Max Unit (PbFree) Power Dissipation P 380 mW SHN1B01FDW1T1G SC74 3,000/Tape & Reel D (PbFree) Junction Temperature T 150 C J For information on tape and reel specifications, Storage Temperature T 55 to +150 C stg including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Semiconductor Components Industries, LLC, 2016 Publication Order Number: June, 2016 Rev. 4 HN1B01FDW1T1/DHN1B01FDW1T1G, SHN1B01FDW1T1G Q1: PNP ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Max Unit CollectorEmitter Breakdown Voltage V Vdc (BR)CEO (I = 2.0 mAdc, I = 0) 50 C B CollectorBase Breakdown Voltage V Vdc (BR)CBO (I = 10 Adc, I = 0) 60 C E EmitterBase Breakdown Voltage V Vdc (BR)EBO (I = 10 Adc, I = 0) 7.0 E C CollectorBase Cutoff Current I Adc CBO (V = 45 Vdc, I = 0) 0.1 CB E CollectorEmitter Cutoff Current I CEO (V = 10 Vdc, I = 0) 0.1 Adc CE B (V = 30 Vdc, I = 0) 2.0 Adc CE B (V = 30 Vdc, I = 0, T = 80C) 1.0 mAdc CE B A DC Current Gain (Note 1) h FE (V = 6.0 Vdc, I = 2.0 mAdc) 200 400 CE C CollectorEmitter Saturation Voltage V Vdc CE(sat) (I = 100 mAdc, I = 10 mAdc) 0.3 C B Q2: NPN ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Max Unit CollectorEmitter Breakdown Voltage V Vdc (BR)CEO (I = 2.0 mAdc, I = 0) 50 C B CollectorBase Breakdown Voltage V Vdc (BR)CBO (I = 10 Adc, I = 0) 60 C E EmitterBase Breakdown Voltage V Vdc (BR)EBO (I = 10 Adc, I = 0) 7.0 E C CollectorBase Cutoff Current I Adc CBO (V = 45 Vdc, I = 0) 0.1 CB E CollectorEmitter Cutoff Current I CEO (V = 10 Vdc, I = 0) 0.1 Adc CE B (V = 30 Vdc, I = 0) 2.0 Adc CE B (V = 30 Vdc, I = 0, T = 80C) 1.0 mAdc CE B A DC Current Gain (Note 1) h FE (V = 6.0 Vdc, I = 2.0 mAdc) 200 400 CE C CollectorEmitter Saturation Voltage V Vdc CE(sat) (I = 100 mAdc, I = 10 mAdc) 0.25 C B 1. Pulse Test: Pulse Width 300 s, D.C. 2%. www.onsemi.com 2