MMBT3904TT1G, SMMBT3904TT1G General Purpose Transistors NPN Silicon This transistor is designed for general purpose amplifier www.onsemi.com applications. It is housed in the SOT416/SC75 package which is designed for low power surface mount applications. GENERAL PURPOSE Features AMPLIFIER TRANSISTORS S Prefix for Automotive and Other Applications Requiring Unique SURFACE MOUNT Site and Control Change Requirements AECQ101 Qualified and PPAP Capable These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant* SOT416/SC75 CASE 463 STYLE 1 MAXIMUM RATINGS (T = 25C) A Rating Symbol Value Unit COLLECTOR 3 Collector Emitter Voltage V 40 Vdc CEO Collector Base Voltage V 60 Vdc CBO 1 Emitter Base Voltage V 6.0 Vdc EBO BASE Collector Current Continuous I 200 mAdc C 2 THERMAL CHARACTERISTICS EMITTER Characteristic Symbol Max Unit Total Device Dissipation, P MARKING DIAGRAM D FR4 Board (Note 1) T = 25C 200 mW A Derated above 25C 1.6 mW/C Thermal Resistance, JunctiontoAmbient 600 C/W R JA AM M (Note 1) Total Device Dissipation, P D 1 FR4 Board (Note 2) T = 25C 300 mW A Derated above 25C 2.4 mW/C AM = Device Code Thermal Resistance, JunctiontoAmbient R 400 C/W JA M = Date Code* (Note 2) = PbFree Package Junction and Storage Temperature Range T , T 65 to +150 C J stg (Note: Microdot may be in either location) Stresses exceeding those listed in the Maximum Ratings table may damage the *Date Code orientation may vary depending up- device. If any of these limits are exceeded, device functionality should not be on manufacturing location. assumed, damage may occur and reliability may be affected. 1. FR4 Minimum Pad 2. FR4 1.0 1.0 Inch Pad ORDERING INFORMATION Device Package Shipping MMBT3904TT1G SOT416 3,000 Tape & Reel (PbFree) SMMBT3904TT1G SOT416 3,000 Tape & Reel (PbFree) *For additional information on our PbFree strategy and soldering details, please For information on tape and reel specifications, download the ON Semiconductor Soldering and Mounting Techniques including part orientation and tape sizes, please Reference Manual, SOLDERRM/D. refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2011 1 Publication Order Number: June, 2017 Rev. 6 MMBT3904TT1/DMMBT3904TT1G, SMMBT3904TT1G ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Max Unit OFF CHARACTERISTICS CollectorEmitter Breakdown Voltage (Note 3) V Vdc (BR)CEO (I = 1.0 mAdc, I = 0) 40 C B CollectorBase Breakdown Voltage V Vdc (BR)CBO 60 (I = 10 Adc, I = 0) C E EmitterBase Breakdown Voltage V Vdc (BR)EBO 6.0 (I = 10 Adc, I = 0) E C Base Cutoff Current I nAdc BL (V = 30 Vdc, V = 3.0 Vdc) 50 CE EB Collector Cutoff Current I nAdc CEX (V = 30 Vdc, V = 3.0 Vdc) 50 CE EB ON CHARACTERISTICS (Note 3) DC Current Gain h FE (I = 0.1 mAdc, V = 1.0 Vdc) 40 C CE (I = 1.0 mAdc, V = 1.0 Vdc) 70 C CE (I = 10 mAdc, V = 1.0 Vdc) 100 300 C CE (I = 50 mAdc, V = 1.0 Vdc) 60 C CE (I = 100 mAdc, V = 1.0 Vdc) 30 C CE CollectorEmitter Saturation Voltage V Vdc CE(sat) (I = 10 mAdc, I = 1.0 mAdc) 0.2 C B (I = 50 mAdc, I = 5.0 mAdc) 0.3 C B BaseEmitter Saturation Voltage V Vdc BE(sat) (I = 10 mAdc, I = 1.0 mAdc) 0.65 0.85 C B (I = 50 mAdc, I = 5.0 mAdc) 0.95 C B SMALLSIGNAL CHARACTERISTICS CurrentGain Bandwidth Product f MHz T (I = 10 mAdc, V = 20 Vdc, f = 100 MHz) 300 C CE Output Capacitance C pF obo (V = 5.0 Vdc, I = 0, f = 1.0 MHz) 4.0 CB E Input Capacitance C pF ibo (V = 0.5 Vdc, I = 0, f = 1.0 MHz) 8.0 EB C Input Impedance h k ie (V = 10 Vdc, I = 1.0 mAdc, f = 1.0 kHz) 1.0 10 CE C 4 Voltage Feedback Ratio h X 10 re (V = 10 Vdc, I = 1.0 mAdc, f = 1.0 kHz) 0.5 8.0 CE C SmallSignal Current Gain h fe (V = 10 Vdc, I = 1.0 mAdc, f = 1.0 kHz) 100 400 CE C Output Admittance h mhos oe (V = 10 Vdc, I = 1.0 mAdc, f = 1.0 kHz) 1.0 40 CE C Noise Figure NF dB (V = 5.0 Vdc, I = 100 Adc, R = 1.0 k , f = 1.0 kHz) 5.0 CE C S SWITCHING CHARACTERISTICS Delay Time (V = 3.0 Vdc, V = 0.5 Vdc) t CC BE d MMBT3904TT1G, SMMBT3904TT1G 35 Rise Time (I = 10 mAdc, I = 1.0 mAdc) t C B1 r MMBT3904TT1G, SMMBT3904TT1G 35 ns Storage Time (V = 3.0 Vdc, I = 10 mAdc) t CC C s MMBT3904TT1G, SMMBT3904TT1G 200 Fall Time (I = I = 1.0 mAdc) t B1 B2 f MMBT3904TT1G, SMMBT3904TT1G 50 3. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. www.onsemi.com 2