Product Information

SPZT651T1G

SPZT651T1G electronic component of ON Semiconductor

Datasheet
ON Semiconductor Bipolar Transistors - BJT

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.7011 ea
Line Total: USD 0.7

683 - Global Stock
Ships to you between
Mon. 20 May to Thu. 23 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
683 - WHS 1


Ships to you between
Mon. 20 May to Thu. 23 May

MOQ : 1
Multiples : 1

Stock Image

SPZT651T1G
ON Semiconductor

1 : USD 0.7011
10 : USD 0.6184
30 : USD 0.5782
100 : USD 0.5358
500 : USD 0.5116
1000 : USD 0.4997

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Technology
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Maximum Operating Temperature
Qualification
Series
Packaging
Brand
Cnhts
Dc Collector/Base Gain Hfe Min
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
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The SPZT651T1G is an NPN general-purpose bipolar transistor manufactured by ON Semiconductor. It has a maximum collector current of 1A and a maximum collector-emitter voltage of 30V. It features a device on state resistance of 250O and an open state current of 10mA. It is an ideally suited for signal loads and other small signal applications. The SPZT651T1G has a high beta and low saturation current which makes it suitable for use in high gain and high current applications. It is RoHS compliant and can operate at a maximum temperature of 150°C.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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