DSA3402 Silicon PNP epitaxial planar type Unit: mm For low frequency amplication DSA9402 in SSSMini3 type package Features High forward current transfer ratio h with excellent linearity FE Low collector-emitter saturation voltage V CE(sat) Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL: Level 1 compliant) Marking Symbol: B2 Packaging DSA340200L Embossed type (Thermo-compression sealing): 10 000 pcs / reel (standard) 1: Base Absolute Maximum Ratings T = 25C 2: Emitter a 3: Collector Parameter Symbol Rating Unit Panasonic SSSMini3-F2-B Collector-base voltage (Emitter open) V 15 V CBO JEITA SC-105AA Collector-emitter voltage (Base open) V 12 V Code SOT-723 CEO Emitter-base voltage (Collector open) V 5 V EBO Collector current I 500 mA C Peak collector current I 1 A CP Collector power dissipation P 100 mW C Junction temperature T 150 C j Operating ambient temperature T 40 to +85 C opr Storage temperature T 55 to +150 C stg Electrical Characteristics T = 25C3C a Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emitter open) V I = 10 mA, I = 0 15 V CBO C E Collector-emitter voltage (Base open) V I = 1 mA, I = 0 12 V CEO C B Emitter-base voltage (Collector open) V I = 10 mA, I = 0 5 V EBO E C Collector-base cutoff current (Emitter open) I V = 10 V, I = 0 0.1 mA CBO CB E Forward current transfer ratio h V = 2 V, I = 10 mA 270 680 FE CE C Collector-emitter saturation voltage V I = 200 mA, I = 10 mA 250 mV CE(sat) C B Transition frequency f V = 2 V, I = 10 mA 300 MHz T CE C Collector output capacitance C V = 10 V, I = 0, f = 1 MHz 4.0 pF ob CB E (Common base, input open circuited) Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. Publication date: March 2014 Ver. CED 1DSA3402 DSA3402 IC-VCE DSA3402 hFE-IC DSA3402 PC-Ta P T I V h I C a C CE FE C 600 800 125 V = 2 V CE T = 25C a 700 500 I = 2.4 mA B 100 T = 85C a 2.1 mA 600 1.8 mA 400 1.5 mA 500 75 1.2 mA 25C 0.9 mA 300 400 40C 50 0.6 mA 300 200 200 0.3 mA 25 100 100 0 0 0 2 3 0 1 2 3 4 5 1 10 10 10 0 40 80 120 160 200 ( ) Ambient temperature T C Collector-emitter voltage V (V) Collector current I (mA) a CE C DSA3402 VCEsat-IC DSA3402 IC-VBE DSA3402 Cob-VCB V I I V C V CE(sat) C C BE ob CB 1 500 I / I = 20 C B V = 2 V I = 0 CE E f = 1 MHz 20 T = 25C a 25C 400 15 T = 85C a 300 1 10 T = 85C a 10 40C 200 25C 5 100 40C 2 10 0 0 2 3 1 10 10 10 0 0.2 0.4 0.6 0.8 1.0 1.2 1 10 Collector current I (mA) Base-emitter voltage V (V) Collector-base voltage V (V) C BE CB DSA3402 fT-IC f I T C 500 V = 2 V CE T = 25C a 400 300 200 100 0 0.1 1 10 100 Collector current I (mA) C Ver. CED 2 Transition frequency f (MHz) Collector-emitter saturation voltage V (V) ( ) Collector power dissipation P mW T CE(sat) C Collector current I (mA) Collector current I (mA) C C Collector output capacitance Forward current transfer ratio h C (pF) FE ob (Common base, input open circuited)