2SA1977-L-A Renesas

2SA1977-L-A electronic component of Renesas Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of 2SA1977-L-A Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2SA1977-L-A Bipolar Transistors - BJT are a product manufactured by Renesas. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

Part No. 2SA1977-L-A
Manufacturer: Renesas
Category: Bipolar Transistors - BJT
Description: GP BJT
Low On-state Resistance Dual P-channel Silicon MOSFET for use in high speed switching applications.
Datasheet: 2SA1977-L-A Datasheet (PDF)
Price (USD)
8: USD 4.5362 ea
Line Total: USD 36.29 
Availability : 0
  
QtyUnit Price
8$ 4.5362
10$ 2.7979
50$ 2.4171
100$ 2.2019

Availability 0
Ship by Fri. 01 Aug to Thu. 07 Aug
MOQ : 8
Multiples : 1
QtyUnit Price
8$ 4.5362
10$ 2.7979
50$ 2.4171
100$ 2.2019

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Brand
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the 2SA1977-L-A from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2SA1977-L-A and other electronic components in the Bipolar Transistors - BJT category and beyond.

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The 2SA1977-L-A is a PNP epitaxial planar type silicon transistors designed for audio and general purpose switching applications. It features a 0.3 Amp collector current, a high voltage rating of up to 250 volts, and a maximum power dissipation of 625 mW. This part is packaged in the TO-126 style housing and is rated for -55°C to 125°C.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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