2SJ506STR-E is a N-channel MOSFET manufactured by Renesas. This power transistor has a maximum drain-source voltage of 50V and a drain current of 6A, making it suitable for high power switching applications in power motor and other high power devices. It has a low on-state resistance and a low gate-source capacitance, making it ideal for switching applications requiring fast switching speeds and low total gate charge. The fast switching speed of the 2SJ506STR-E ensures high efficiency, and the integrated protection diode helps to prevent reverse voltage damage. The 2SJ506STR-E is housed in a TO-220 package, which is compatible with most commonly used PCB designs. This power transistor is ideal for high power and high speed applications, which require fast switching and low gate charge.