2SAR522EBTL ROHM

2SAR522M / 2SAR522EB / 2SAR522UB PNP -200mA -20V General purpose transistor Datasheet llOutline Parameter Value SOT-723 SOT-416FL V -20V CEO I -200mA C 2SAR522M 2SAR522EB (VMT3) (EMT3F) SOT-323FL 2SAR522UB (UMT3F) llFeatures llInner circuit 1) General Purpose. 2) Complementary NPN Types: 2SCR522M (VMT3) / 2SCR522EB (EMT3F) / 2SCR522UB (UMT3F) llApplication GENERAL PURPOSE SMALL SIGNAL AMPLIFIER llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-723 2SAR522M 1212 T2L 180 8 8000 PC (VMT3) SOT-416FL 2SAR522EB 1616 TL 180 8 3000 PC (EMT3F) SOT-323FL 2SAR522UB 2021 TL 180 8 3000 PC (UMT3F) www.rohm.com 1 / 8 20151127 - Rev.002 2015 ROHM Co., Ltd. All rights reserved. 2SAR522M / 2SAR522EB / 2SAR522UB Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit V Collector-base voltage -20 V CBO Collector-emitter voltage V -20 V CEO V Emitter-base voltage -5 V EBO I -200 mA C Collector current *1 I -400 mA CP 2SAR522M 150 *2 P Power dissipation 2SAR522EB 150 mW D 2SAR522UB 200 T Junction temperature 150 j T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = -50A -20 - - V CBO C voltage Collector-emitter breakdown BV I = -1mA -20 - - V CEO C voltage BV Emitter-base breakdown voltage I = -50A -5 - - V EBO E Collector cut-off current I V = -20V - - -100 nA CBO CB Emitter cut-off current I V = -5V - - -100 nA EBO EB Collector-emitter saturation voltage V I = -100mA, I = -10mA - -120 -300 mV CE(sat) C B h DC current gain V = -2V, I = -1mA 120 - 560 - FE CE C V = -10V, I = 10mA, CE E f Transition frequency - 350 - MHz T f = 100MHz V = -10V, I = 0A, CB E C Output capacitance - 3.0 - pF ob f = 1MHz *1 Pw=10ms Single Pulse *2 Each terminal mounted on a reference land. www.rohm.com 2/8 20151127 - Rev.002 2015 ROHM Co., Ltd. All rights reserved.