2SAR543RTL ROHM

2SAR543R Datasheet PNP -3.0A -50V Middle Power Transistor llOutline Parameter Value TSMT3 V -50V CEO I -3A C SOT-346T SC-96 llFeatures 1)Suitable for Middle Power Driver llInner circuit 2)Complementary NPN Types:2SCR543R 3)Low saturation voltage V =-400mV(Max.) CE(sat) (I / I =-2A/-100mA) C B llApplication LOW FREQUENCY AMPLIFIER, HIGH SPEED SWITCHING llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) 2SAR543R TSMT3 2928 TL 180 8 3000 MR www.rohm.com 1/6 20150730 - Rev.002 2015 ROHM Co., Ltd. All rights reserved.2SAR543R Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit V Collector-base voltage -50 V CBO V Collector-emitter voltage -50 V CEO V Emitter-base voltage -6 V EBO I -3 A C Collector current *1 I -6 A CP *2 P 0.5 W D Power dissipation *3 P 1.0 W D T Junction temperature 150 j T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = -100A -50 - - V CBO C voltage Collector-emitter breakdown BV I = -1mA -50 - - V CEO C voltage BV Emitter-base breakdown voltage I = -100A -6 - - V EBO E I Collector cut-off current V = -50V - - -1.0 A CBO CB Emitter cut-off current I V = -4V - - -1.0 A EBO EB Collector-emitter saturation voltage V I = -2A, I = -100mA - -200 -400 mV CE(sat) C B DC current gain h V = -3V, I = -100mA 180 - 450 - FE CE C V = -10V, I = 300mA, CE E f Transition frequency - 300 - MHz T f = 100MHz V = -10V, I = 0mA, CB E C Output capacitance - 35 - pF ob f = 1MHz I = -2A, C t Turn-On time - 45 - ns on I = -200mA, B1 I = 200mA, B2 Storage time t - 250 - ns stg V -10V, CC R = 4.7 L t Fall time - 40 - ns f See test circuit *1 Pw=10ms, Single Pulse *2 Mounted on a reference land *3 Mounted on a ceramic board (40400.7mm) www.rohm.com 2/6 20150730 - Rev.002 2015 ROHM Co., Ltd. All rights reserved.