2SAR544RTL ROHM

2SAR544R Datasheet PNP -2.5A -80V Middle Power Transistor llOutline SOT-346T Parameter Value SC-96 V -80V CEO I -2.5A C TSMT3 llFeatures llInner circuit 1)Suitable for Middle Power Driver 2)Complementary NPN Types:2SCR544R 3)Low V CE(sat) V =-400mV (Max.) CE(sat) (I /I =-1A/-50mA) C B llApplication LOW FREQUENCY AMPLIFIER, HIGH SPEED SWITCHING llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-346T 2SAR544R 2928 TL 180 8 3000 MS (TSMT3) www.rohm.com 1/6 20160107 - Rev.002 2015 ROHM Co., Ltd. All rights reserved.2SAR544R Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit V Collector-base voltage -80 V CBO V Collector-emitter voltage -80 V CEO V Emitter-base voltage -6 V EBO I -2.5 A C Collector current *1 I -5 A CP *2 P 0.5 W D Power dissipation *3 P 1.0 W D T Junction temperature 150 j T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = -100A -80 - - V CBO C voltage Collector-emitter breakdown BV I = -1mA -80 - - V CEO C voltage BV Emitter-base breakdown voltage I = -100A -6 - - V EBO E I Collector cut-off current V = -80V - - -1.0 A CBO CB Emitter cut-off current I V = -4V - - -1.0 A EBO EB Collector-emitter saturation voltage V I = -1A, I = -50mA - -200 -400 mV CE(sat) C B DC current gain h V = -3V, I = -100mA 120 - 390 - FE CE C V = -10V, I = 500mA, CE E f Transition frequency - 280 - MHz T f = 100MHz V = -10V, I = 0mA, CB E C Output capacitance - 32 - pF ob f = 1MHz I = -1.3A, C t Turn-On time - 50 - ns on I = -130mA, B1 I = 130mA, B2 Storage time t - 400 - ns stg V -10V, CC R = 7.5 L t Fall time - 40 - ns f See test circuit *1 Pw=10ms, Single pulse *2 Each terminal mounted on a reference land. *3 Mounted on a ceramic board(40400.7mm ). www.rohm.com 2/6 20160107 - Rev.002 2015 ROHM Co., Ltd. All rights reserved.