BC858BT116 ROHM

BC858BT116 electronic component of ROHM
BC858BT116 ROHM
BC858BT116 Bipolar Transistors - BJT
BC858BT116  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of BC858BT116 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. BC858BT116 Bipolar Transistors - BJT are a product manufactured by ROHM. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

Part No. BC858BT116
Manufacturer: ROHM
Category: Bipolar Transistors - BJT
Description: ROHM Semiconductor Bipolar Transistors - BJT PNP 30V 1MA
Datasheet: BC858BT116 Datasheet (PDF)
Price (USD)
2782: USD 0.0935 ea
Line Total: USD 260.12 
Availability : 6159
  
Ship by Wed. 17 Sep to Tue. 23 Sep
QtyUnit Price
2782$ 0.0935
4025$ 0.0646
4211$ 0.0617
6000$ 0.0584

Availability 6159
Ship by Wed. 17 Sep to Tue. 23 Sep
MOQ : 2782
Multiples : 1
QtyUnit Price
2782$ 0.0935
4025$ 0.0646
4211$ 0.0617
6000$ 0.0584

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Brand
Dc Collector/Base Gain Hfe Min
Factory Pack Quantity :
Height
Length
Continuous Collector Current
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BC858BT116 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BC858BT116 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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BC858B Datasheet PNP General purpose transistor llOutline SOT-23 Parameter Value V -30V CEO I -100mA C SST3 llFeatures llInner circuit 1)BV -30V (I =-1mA) CEO C 2)Complements the BC848B llApplication AUDIO FREQUENCY SMALL SIGNAL AMPLIFIER llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-23 BC858B 2924 T116 180 8 3000 G3K (SST3) www.rohm.com 1/6 20160606 - Rev.002 2016 ROHM Co., Ltd. All rights reserved. BC858B Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit V Collector-base voltage -30 V CBO V Collector-emitter voltage -30 V CEO V Emitter-base voltage -5 V EBO I Collector current -100 mA C *1 P 200 mW D Power dissipation *2 P 350 mW D T Junction temperature 150 j T Range of storage temperature -65 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = -50A -30 - - V CBO C voltage Collector-emitter breakdown BV I = -1mA -30 - - V CEO C voltage BV Emitter-base breakdown voltage I = -50A -5 - - V EBO E V = -30V - - -100 nA CB Collector cut-off current I CBO V = -30V, T = 150 - - -4 A CB a V 1 I = -10mA, I = -0.5mA - - -300 mV CE(sat) C B Collector-emitter saturation voltage V 2 I = -100mA, I = -5mA - - -650 mV CE(sat) C B Base-emitter turn V V = -5V, I = -10mA -600 - -750 mV BE(on) CE C on voltage h DC current gain V = -5V, I = -2mA 210 - 480 - FE CE C V = -5V, I = 20mA, CE E f Transition frequency - 250 - MHz T f = 100MHz V = -10V, I = 0A CB E C Output capacitance - 4.5 - pF ob f = 1MHz *1 Each terminal mounted on a reference land. *2 Mounted on a ceramic board(7.05.00.6mm). www.rohm.com 2/6 20160606 - Rev.002 2016 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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