Product Information

IMT4T108

IMT4T108 electronic component of ROHM

Datasheet
Transistors Bipolar - BJT DUAL PNP 120V 50MA SOT-457
Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

420: USD 0.0941 ea
Line Total: USD 39.52

7299 - Global Stock
Ships to you between
Wed. 29 May to Tue. 04 Jun
MOQ: 420  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
25263 - WHS 1


Ships to you between Tue. 04 Jun to Thu. 06 Jun

MOQ : 1
Multiples : 1

Stock Image

IMT4T108
ROHM

1 : USD 0.36
10 : USD 0.2829
100 : USD 0.1587
1000 : USD 0.115
3000 : USD 0.0966
9000 : USD 0.0954
24000 : USD 0.092

7299 - WHS 2


Ships to you between Wed. 29 May to Tue. 04 Jun

MOQ : 279
Multiples : 1

Stock Image

IMT4T108
ROHM

279 : USD 0.146
500 : USD 0.1247
1000 : USD 0.1183
2000 : USD 0.1106
3000 : USD 0.1098
6000 : USD 0.1039

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Dc Current Gain Hfe Max
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
Height
Length
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Additional Infomation About Product

IMT4 Transistors General purpose (dual transistors) IMT4 z External dimensions (Unit : mm) z Features 1) Two 2SA1514K chips in an AMT package. 2) High breakdown voltage. IMT4 1.6 z Package, marking, and Packaging specifications 2.8 Part No. IMT4 Package SMT6 0.3Min. Each lead has same dimensions T4 Marking ROHM : SMT6 T108 EIAJ : SC-74 Code JEDEC : SOT-457 Basic ordering unit (pieces) 3000 z Equivalent circuit IMT4 (4) (5) (6) Tr2 Tr1 (3) (2) (1) z Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit Collector-base voltage VCBO 120 V Collector-emitter voltage VCEO 120 V Emitter-base voltage VEBO 5 V Collector current IC 50 mA Power dissipation Pc 300 (TOTAL) mW Junction temperature Tj 150 C Storage temperature Tstg 55 to +150 C 200mW per element must not be exceeded. z Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Collector-base breakdown voltage BVCBO 120 V IC=50A Collector-emitter breakdown voltage BVCEO 120 V IC=1mA Emitter-base breakdown voltage BVEBO 5 V IE=50A Collector cutoff current ICBO 0.5 A VCB=100V Emitter cutoff current IEBO 0.5 A VEB=4V DC current transfer ratio hFE 180 820 VCE=6V, IC2mA Transition frequency fT 140 MHz VCE=12V, IE=2mA, f=100MHz Collector-emitter saturation voltage VCE(sat) 0.5 V IC/IB=10mA/1mA Transition frequency of the device. Rev.A 1/2 0.15 0.3 ( ) ( ) (4) 5 6 0~0.1 ( ) (3) (2) 1 0.8 0.95 0.95 1.9 1.1 2.93V 5V IMT4 Transistors z Electrical characteristic curves 50 10 Ta=25C Ta=25C V = 6V Ta=25C CE 20 500 8 10 5 VCE= 1V 6 200 2 4 1 100 0.5 5.0 2 50 0.2 2.5A IB=0 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 4 8 12 16 20 0.2 0.5 1 2 5 10 20 50 BASE TO EMITTER VOLTAGE : V (V) BE COLLECTOR TO EMITTER VOLTAGE : VCE (V) COLLECTOR CURRENT : IC (mA) Fig.2 Ground emitter propagation Fig.1 Ground emitter output characteristics Fig.3 DC current gain vs. collector current characteristics 20 Ta=25C Ta=25C Ta=25C f=1MHZ VCE= 6V IE=0A 0.5 500 10 Cob 5 0.2 200 IC/IB=50/1 100 0.1 20/1 2 10/1 50 0.05 1 0.2 0.5 1 2 5 10 20 50 0.5 1 2 5 10 20 50 0.5 1 2 5 10 20 COLLECTOR CURRENT : IC (mA) EMITTER CURRENT : IE (mA) COLLECTOR TO BASE VOLTAGE : VCB (V) Fig.4 Collector-Emitter saturation voltage Fig.5 Transition frequency Fig.6 Collector output capacitance vs. collector current vs. emitter current vs. collector-base voltage 20 Ta=25C f=1MHZ IC=0A Cib 10 5 2 1 0.5 1 2 5 10 20 EMITTER TO BASE VOLTAGE : VEB (V) Fig.7 Emitter input capacitance vs. emitter-base voltage Rev.A 2/2 12.5 10.0 7.5 15.0 17.5 20.0 25.0 22.5 COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) EMITTER INPUT CAPACITANCE : Cib (pF) COLLECTOR CURRENT : IC (mA) TRANSITION FREQUENCY : fT (MHZ) COLLECTOR CURRENT : IC (mA) DC CURRENT GAIN : hFE COLLECTOR OUTPUT CAPACITANCE : Cob (pF)

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

ROHM may also be referenced as

LAPIS Semiconductor
RHE
RHM
ROHM Semicon
ROHM Semiconductor

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