UMT2222A / SST2222A / MMST2222A Transistors NPN Medium Power Transistor (Switching) UMT2222A / SST2222A / MMST2222A z Features z Dimensions (Unit : mm) 1) BVCEO > 40V (IC=10mA) UMT2222A 2) Complements the UMT2907A / SST2907A / MMST2907A. (1) Emitter (2) Base ROHM : UMT3 EIAJ : SC-70 (3) Collector SOT-323 z Package, marking, and packaging specifications SST2222A Part No. UMT2222A SST2222A MMST2222A Packaging type UMT3 SST3 SMT3 R1P R1P R1P Marking Code T106 T116 T146 (1) Emitter Basic ordering unit 3000 3000 3000 (2) Base (pieces) (3) Collector ROHM : SST3 MMST2222A z Absolute maximum ratings (Ta = 25C) Parameter Symbol Limits Unit (1) Emitter Collector-base voltage VCBO 75 V (2) Base ROHM : SMT3 Collector-emitter voltage VCEO 40 V EIAJ : SC-59 (3) Collector Emitter-base voltage VEBO 6 V Collector current IC 0.6 A UMT2222A,SST2222A, 0.2 W MMST2222A Collector power PC SST2222A 0.35 W dissipation Junction temperature Tj 150 C Storage temperature Tstg 55 to +150 C When mounted on a 7 x 5 x 0.6 mm ceramic board z Electrical characteristics (Ta = 25C) Parameter Symbol Min. Typ. Max. Unit Conditions Collector-base breakdown voltage BVCBO 75 V IC =10A Collector-emitter breakdown voltage BVCEO 40 V IC =10mA Emitter-base breakdown voltage BVEBO 6 V IE =10A Collector cutoff current ICBO 100 nA VCB = 60V Emitter cutoff current IEBO 100 nA VEB = 3V 0.3 IC/IB =150mA/15mA Collector-emitter saturation voltage VCE(sat) V 1IC/IB =500mA/50mA 0.6 1.2 IC/IB =150mA/15mA Base-emitter saturation voltage VBE(sat) V 2 IC/IB =500mA/50mA 35 VCE =10V , IC =0.1mA 50 VCE =10V , IC =1mA 75 VCE =10V , IC =10mA DC current transfer ratio hFE 50 VCE =1V , IC =150mA 100 300 VCE =10V , IC =150mA 40 VCE =10V , IC =500mA Transition frequency fT 300 MHz VCE =20V , IC =20mA, f =100MHz Output capacitance Cob 8 pF VCB =10V , f =100kHz Emitter input capacitance Cib 25 pF VEB =0.5V , f =100kHz Delay time td 10 ns VCC =30V , VBE(OFF) =0.5V , IC =150mA , IB1 =15mA VCC =30V , VBE(OFF) =0.5V , IC =150mA , IB1 =15mA Rise time tr 25 ns Storage time tstg 225 ns VCC =30V , IC =150mA , IB1 =IB2 =15mA Fall time tf 60 ns VCC =30V , IC =150mA , IB1 =IB2 =15mA Rev.A 1/3 UMT2222A / SST2222A / MMST2222A Transistors z Electrical characteristic curves 100 1000 600 Ta=25C Ta=25C 500 400 VCE=10V 50 100 300 200 1V 100 IB=0A 0 10 0 5 10 0.1 1.0 10 100 1000 COLLECTOR-EMITTER VOLTAGE : VCE(V) COLLECTOR CURRENT : Ic(mA) Fig.1 Grounded emitter output Fig.3 DC current gain vs. collector current() characteristics 1000 Ta=25C VCE=10V IC / IB=10 0.3 Ta=125C 25C 0.2 100 55C 0.1 0 10 1.0 10 100 1000 0.1 1.0 10 100 1000 COLLECTOR CURRENT : Ic(mA) COLLECTOR CURRENT : Ic(mA) Fig.2 Collector-emitter saturation Fig.4 DC current gain vs. collector current() voltage vs. collector current 1.8 Ta=25C 1000 IC / IB=10 Ta=25C 1.6 VCE=10V f=1kHz 1.2 0.8 100 0.4 0 1.0 10 100 1000 10 COLLECTOR CURRENT : Ic(mA) 0.1 1.0 10 100 1000 COLLECTOR CURRENT : Ic(mA) Fig.6 Base-emitter saturation Fig.5 AC current gain vs. collector current voltage vs. collector current Rev.A 2/3 COLLECTOR EMITTER SATURATION VOLTAGE : VCE(sat)(V) AC CURRENT GAIN : hFE COLLECTOR CURRENT : Ic(mA) DC CURRENT GAIN : hFE DC CURRENT GAIN : hFE BASE EMITTER SATURATION VOLTAGE : VBE(sat)(V)