JANS2N2222A Semicoa

JANS2N2222A electronic component of Semicoa
JANS2N2222A Semicoa
JANS2N2222A Bipolar Transistors - BJT
JANS2N2222A  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of JANS2N2222A Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. JANS2N2222A Bipolar Transistors - BJT are a product manufactured by Semicoa. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

Part No. JANS2N2222A
Manufacturer: Semicoa
Category: Bipolar Transistors - BJT
Description: Trans GP BJT NPN 50V 0.8A 3-Pin TO-18
Datasheet: JANS2N2222A Datasheet (PDF)
Price (USD)
50: USD 31.4375 ea
Line Total: USD 1571.88 
Availability : 0
  
QtyUnit Price
50$ 31.4375
100$ 30.7375
500$ 30.5375
1000$ 30.35
2500$ 30.2125

Availability 0
Ship by Mon. 17 Nov to Fri. 21 Nov
MOQ : 50
Multiples : 1
QtyUnit Price
50$ 31.4375
100$ 30.7375
500$ 30.5375
1000$ 30.35
2500$ 30.2125


Availability 0
Ship by Mon. 17 Nov to Fri. 21 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 83.4588

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Transistor Polarity
Brand
Collector Current Dc
Collector-Emitter Voltage
Power Dissipation
Operating Temp Range
Pin Count
Dc Current Gain
Category
Collector-Base Voltage
Emitter-Base Voltage
Package Type
Number Of Elements
Operating Temperature Classification
Rad Hardened
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the JANS2N2222A from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the JANS2N2222A and other electronic components in the Bipolar Transistors - BJT category and beyond.

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TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/255 DEVICES LEVELS 2N2221A 2N2222A JAN 2N2221AL 2N2222AL JANTX 2N2221AUA 2N2222AUA JANTXV 2N2221AUB 2N2222AUB JANS 2N2221AUBC * 2N2222AUBC * * Available to JANS quality level only. ABSOLUTE MAXIMUM RATINGS (T = +25C unless otherwise noted) C Parameters / Test Conditions Symbol Value Unit Collector-Emitter Voltage V 50 Vdc CEO Collector-Base Voltage V 75 Vdc CBO Emitter-Base Voltage V 6.0 Vdc EBO Collector Current I 800 mAdc C TO-18 (TO-206AA) Total Power Dissipation T = +25C P 0.5 W 2N2221A, 2N2222A A T Operating & Storage Junction Temperature Range T , T -65 to +200 C op stg THERMAL CHARACTERISTICS Parameters / Test Conditions Symbol Max. Unit Thermal Resistance, Junction-to-Ambient 2N2221A, L 2N2222A, L 325 R C/W JA 2N2221AUA 2N2222AUA 210 4 PIN 2N2221AUB, UBC 2N2222AUB, UBC 325 2N2221AUA, 2N2222AUA Note: Consult 19500/255 for thermal performance curves. 1. Derate linearly 3.08mW/C above T > +37.5C A 2. Derate linearly 4.76mW/C above T > +63.5C A ELECTRICAL CHARACTERISTICS (T = +25C, unless otherwise noted) A Parameters / Test Conditions Symbol Min. Max. Unit OFF CHARACTERTICS Collector-Emitter Breakdown Voltage V 50 Vdc (BR)CEO I = 10mAdc 3 PIN C 2N2221AUB, 2N2222AUB Collector-Base Cutoff Current 2N2221AUBC, 2N2222AUBC V = 75Vdc I 10 Adc CB CBO (UBC = Ceramic Lid Version) V = 60Vdc 10 Adc CB Emitter-Base Cutoff Current V = 6.0Vdc I 10 Adc EB EBO V = 4.0Vdc 10 EB Adc Collector-Emitter Cutoff Current I 50 Adc CES V = 50Vdc CE T4-LDS-0060 Rev. 2 (100247) Page 1 of 6 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com ELECTRICAL CHARACTERISTICS (T = +25C, unless otherwise noted) A Parameters / Test Conditions Symbol Min. Max. Unit (2) ON CHARACTERISTICS Forward-Current Transfer Ratio I = 0.1mAdc, V = 10Vdc 2N2221A, L, UA, UB, UBC 30 C CE 2N2222A, L, UA, UB, UBC 50 I = 1.0mAdc, V = 10Vdc 2N2221A, L, UA, UB, UBC 35 150 C CE 2N2222A, L, UA, UB, UBC 75 325 I = 10mAdc, V = 10Vdc 2N2221A, L, UA, UB, UBC 40 C CE h FE 2N2222A, L, UA, UB, UBC 100 I = 150mAdc, V = 10Vdc 2N2221A, L, UA, UB, UBC 40 120 C CE 2N2222A, L, UA, UB, UBC 100 300 I = 500mAdc, V = 10Vdc 2N2221A, L, UA, UB, UBC 20 C CE 2N2222A, L, UA, UB, UBC 30 Collector-Emitter Saturation Voltage V Vdc I = 150mAdc, I = 15mAdc CE(sat) 0.3 C B I = 500mAdc, I = 50mAdc 1.0 C B Base-Emitter Voltage V Vdc BE(sat) I = 150mAdc, I = 15mAdc 0.6 1.2 C B I = 500mAdc, I = 50mAdc 2.0 C B DYNAMIC CHARACTERISTICS Parameters / Test Conditions Symbol Min. Max. Unit Small-Signal Short-Circuit Forward Current Transfer Ratio h fe I = 1.0mAdc, V = 10Vdc, f = 1.0kHz 2N2221A, L, UA, UB, UBC 30 C CE 2N2222A, L, UA, UB, UBC 50 Magnitude of SmallSignal Short-Circuit Forward Current Transfer Ratio h fe I = 20mAdc, V = 20Vdc, f = 100MHz 2.5 C CE Output Capacitance C 8.0 pF obo V = 10Vdc, I = 0, 100kHz f 1.0MHz CB E Input Capacitance C 25 pF ibo V = 0.5Vdc, I = 0, 100kHz f 1.0MHz EB C SWITCHING CHARACTERISTICS Parameters / Test Conditions Symbol Min. Max. Unit Turn-On Time t 35 s on See figure 8 of MIL-PRF-19500/255 Turn-Off Time t 300 s off See Figure 9 of MIL-PRF-19500/255 (2) Pulse Test: Pulse Width = 300s, Duty Cycle 2.0%. T4-LDS-0060 Rev. 2 (100247) Page 2 of 6

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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