MJE15028, MJE15030 (NPN), MJE15029, MJE15031 (PNP) Complementary Silicon Plastic Power Transistors These devices are designed for use as highfrequency drivers in audio amplifiers. MJE15028, MJE15030 (NPN), MJE15029, MJE15031 (PNP) ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) C Characteristic Symbol Min Max Unit OFF CHARACTERISTICS CollectorEmitter Sustaining Voltage (Note 1) V Vdc CEO(sus) (I = 10 mAdc, I = 0) C B MJE15028, MJE15029 120 MJE15030, MJE15031 150 Collector Cutoff Current I mAdc CEO (V = 120 Vdc, I = 0) CE B MJE15028, MJE15029 0.1 (V = 150 Vdc, I = 0) CE B MJE15030, MJE15031 0.1 Collector Cutoff Current I Adc CBO (V = 120 Vdc, I = 0) CB E MJE15028, MJE15029 10 (V = 150 Vdc, I = 0) CB E MJE15030, MJE15031 10 Emitter Cutoff Current I Adc EBO (V = 5.0 Vdc, I = 0) 10 BE C ON CHARACTERISTICS (Note 1) DC Current Gain h FE (I = 0.1 Adc, V = 2.0 Vdc) C CE 40 (I = 2.0 Adc, V = 2.0 Vdc) C CE 40 (I = 3.0 Adc, V = 2.0 Vdc) C CE 40 (I = 4.0 Adc, V = 2.0 Vdc) C CE 20 DC Current Gain Linearity h Typ FE (V From 2.0 V to 20 V, I From 0.1 A to 3 A) 2 CE C (NPN to PNP) 3 CollectorEmitter Saturation Voltage V Vdc CE(sat) (I = 1.0 Adc, I = 0.1 Adc) 0.5 C B BaseEmitter On Voltage V Vdc BE(on) (I = 1.0 Adc, V = 2.0 Vdc) 1.0 C CE DYNAMIC CHARACTERISTICS Current Gain Bandwidth Product (Note 2) f MHz T (I = 500 mAdc, V = 10 Vdc, f = 10 MHz) 30 C CE test 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. 2. f = h f . T fe test T T A C 3.0 60 2.0 40 T C T 1.0 20 A 0 0 0 20 40 60 80 100 120 140 160 T, TEMPERATURE (C) Figure 1. Power Derating