X-On Electronics has gained recognition as a prominent supplier of 2N5320 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2N5320 Bipolar Transistors - BJT are a product manufactured by SPC Technology. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

2N5320 SPC Technology

2N5320 electronic component of SPC Technology
2N5320 SPC Technology
2N5320 Bipolar Transistors - BJT
2N5320  Semiconductors

Images are for reference only
See Product Specifications
Part No. 2N5320
Manufacturer: SPC Technology
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT NPN Ampl/Switch
Datasheet: 2N5320 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 2.4494 ea
Line Total: USD 2.45 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Tue. 13 May to Mon. 19 May
MOQ : 1
Multiples : 1
1 : USD 2.4494
10 : USD 2.1458
100 : USD 1.9246
500 : USD 1.5041
1000 : USD 1.2521
5000 : USD 1.2285

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Brand
Dc Collector/Base Gain Hfe Min
Factory Pack Quantity :
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the 2N5320 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2N5320 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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2N5320 2N5321 NPN 2N5322 2N5323 PNP www.centralsemi.com COMPLEMENTARY SILICON DESCRIPTION: SWITCHING TRANSISTORS The CENTRAL SEMICONDUCTOR 2N5320, 2N5322 series types are complementary silicon power transistors manufactured by the epitaxial planar process, designed for amplifier and switching applications. MARKING: FULL PART NUMBER TO-39 CASE 2N5320 2N5321 MAXIMUM RATINGS: (T =25C) SYMBOL 2N5322 2N5323 UNITS C Collector-Base Voltage V 100 75 V CBO Collector-Emitter Voltage V 100 75 V CEV Collector-Emitter Voltage V 75 50 V CEO Emitter-Base Voltage V 6.0 5.0 V EBO Continuous Collector Current I 2.0 A C Continuous Base Current I 1.0 A B Power Dissipation P 10 W D Operating and Storage Junction Temperature T , T -65 to +200 C J stg Thermal Resistance 175 C/W JA Thermal Resistance 17.5 C/W JC ELECTRICAL CHARACTERISTICS: (T =25C unless otherwise noted) C 2N5320 2N5321 2N5322 2N5323 SYMBOL TEST CONDITIONS MIN MAX MIN MAX UNITS I V=80V - 0.5 - - A CBO CB I V=60V - - - 5.0 A CBO CB I V=5.0V - 0.1 - - A EBO EB I V=4.0V - - - 0.5 A EBO EB BV I =100A, V=1.5V 100 - 75 - V CEV C BE BV I=10mA 75 - 50 - V CEO C BV I=100A 6.0 - 5.0 - V EBO E V I =500mA, I =50mA (2N5320) - 0.5 - - V CE(SAT) C B V I =500mA, I =50mA (2N5321) - - - 0.8 V CE(SAT) C B V I =500mA, I =50mA (2N5322) - 0.7 - - V CE(SAT) C B V I =500mA, I =50mA (2N5323) - - - 1.2 V CE(SAT) C B V V =4.0V, I=500mA - 1.1 - 1.4 V BE(ON) CE C h V =4.0V, I=500mA 30 175 40 250 FE CE C h V =2.0V, I=1.0A 10 - - - FE CE C f V =4.0V, I=50mA, f=10MHz 50 - 50 - MHz T CE C R5 (11-May 2017)2N5320 2N5321 NPN 2N5322 2N5323 PNP COMPLEMENTARY SILICON SWITCHING TRANSISTORS ELECTRICAL CHARACTERISTICS - Continued: (T =25C unless otherwise noted) C SYMBOL TEST CONDITIONS MAX UNITS t V =30V, I =500mA, I =50mA (2N5320, 2N5321) 80 ns on CC C B1 t V =30V, I =500mA, I =50mA (2N5322, 2N5323) 100 ns on CC C B1 t V =30V, I =500mA, I =I =50mA (2N5320, 2N5321) 800 ns off CC C B1 B2 t V =30V, I =500mA, I =I =50mA (2N5322, 2N5323) 1.0 s off CC C B1 B2 TO-39 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Emitter 2) Base 3) Collector MARKING: FULL PART NUMBER R5 (11-May 2017) www.centralsemi.com

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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