STL90N6F7 Datasheet N-channel 60 V, 4.6 m typ., 90 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 package Features V R max I Order code DS DS(on) D STL90N6F7 60 V 5.4 m 90 A Among the lowest R on the market DS(on) Excellent FoM (figure of merit) Low C /C ratio for EMI immunity rss iss PowerFLAT 5x6 High avalanche ruggedness D(5, 6, 7, 8) 8 7 6 5 Applications Switching applications G(4) Description This N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced 1 2 3 4 trench gate structure that results in very low on-state resistance, while also reducing Top View S(1, 2, 3) internal capacitance and gate charge for faster and more efficient switching. AM15540v2 Product status link STL90N6F7 Product summary Order code STL90N6F7 Marking 90N6F7 Package PowerFLAT 5x6 Packing Tape and reel DS10917 - Rev 3 - January 2020 www.st.com For further information contact your local STMicroelectronics sales office.STL90N6F7 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Drain-source voltage 60 V DS V Gate-source voltage 20 V GS (1) I Drain current (continuous) at T = 25 C 90 A C D (1) I Drain current (continuous) at T = 100 C 66 A C D (1) (2) I Drain current (pulsed) 360 A DM (3) Drain current (continuous) at T = 25 C I 21 A D pcb (3) Drain current (continuous) at T = 100 C I 15 A D pcb (2) (3) I Drain current (pulsed) 84 A DM (1) P Total dissipation at T = 25 C 94 W TOT C (3) P Total dissipation at T = 25 C 4.8 W TOT pcb T Storage temperature -55 to 175 C stg T Max. operating junction temperature 175 C j 1. This value is rated according to R thj-c 2. Pulse width limited by safe operating area 3. This value is rated according to R thj-pcb Table 2. Thermal data Symbol Parameter Value Unit (1) R Thermal resistance junction-pcb max. 31.3 C/W thj-pcb R Thermal resistance junction-case max. 1.6 C/W thj-case 1. When mounted on FR-4 board of 1 inch, 2oz Cu, t < 10 sec DS10917 - Rev 3 page 2/14