SSM10N954L MOSFETs Silicon N-Channel MOS SSM10N954L 1. Applications Battery protection circuits 2. Features (1) Low source-source on-resistance : R = 2.2 m (typ.) ( V = 3.8 V) SS(ON) GS : R = 2.1 m (typ.) ( V = 4.5 V) SS(ON) GS (2) RoHS Compatible (Note 1) (3) Halogen-free Note 1: The RoHS is the Directive 2011/65/EU of the European Parliament and of the Council of 8 June 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. 3. Packaging and Pin Assignment TCSPAC-153001 Start of commercial production 2020-11 2020-2021 2021-03-18 1 Toshiba Electronic Devices & Storage Corporation Rev.2.0SSM10N954L 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, T = 25 ) a Characteristics Symbol Rating Unit Source-source voltage V 12 V SSS Gate-source voltage V 8 V GSS Source current (DC) I 13.5 A S Source current (pulsed) (t 10 s) (Note 1) I 135 SP Power dissipation (Note 2) P 0.8 W D Power dissipation (t 10 s) (Note 2) 1.4 Channel temperature T 150 ch Storage temperature T -55 to 150 stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Pulse width 10 s, Duty 1 % Note 2: Device mounted on an 25 mm 27.5 mm, t = 1.6 mm, Cu Pad: 687.5 mm2, FR4 glass epoxy board Note: The MOSFETs in this device are sensitive to electrostatic discharge. When handling this device, the worktables, operators, soldering irons and other objects should be protected against anti-static discharge. Note: The channel-to-ambient thermal resistance, R , and the drain power dissipation, P , vary according to th(ch-a) D the board material, board area, board thickness and pad area. When using this device, be sure to take heat dissipation fully into account. 5. Safety Precautions This section lists important precautions which users of semiconductor devices (and anyone else) should observe in order to avoid injury to human body and damage to property, and to ensure safe and correct use of our products. Handling Precaution for MOSFET in use of Protection Circuit for Battery Pack Use a unit, for example PTC Thermistor, which can shut off the power supply if a short-circuit occurs. If the power supply is not shut off on the occurring short-circuit, a large short-circuit current will flow continuously, which may cause the device to catch fire ore smoke. The product listed in this document is intended for usage in Lithium Ion Battery charge and discharge control application. So it is responsible for customer when using the product in the different application. 2020-2021 2021-03-18 2 Toshiba Electronic Devices & Storage Corporation Rev.2.0