Surface Mount Dual NPN Transistor 2N5794U (TX, TXV) Features: Ceramic 6 pin surface mount package Small package to minimize circuit board area Hermetically sealed Electrical performance similar to dual 2N2222 Processed per MIL-PRF-19500/495 Description: The 2N5794U (TX, TXV) are hermetically sealed, ceramic surface mount devices, consisting of two individual silicon NPN transistors. The six pin ceramic package is ideal for designs where board space and device weight are important design considerations. Typical screening and lot acceptance tests are per MIL-PRF-19500/495. The burn-in condition is V = 30 V, P = 300 mW CB D each transistor, T = 25C. Refer to MIL-PRF-19500/495 for complete requirements. A When ordering parts without processing, do not use the TX or TXV suffix. Applications: General switching Amplification Signal processing Radio transmission Logic gates 5 6 3 2 Pin LED Pin Transistor 3 Base 2 Base 4 Collector 1 Collector 5 Emitter 6 Emitter General Note TT Electronics OPTEK Technology TT Electronics reserves the right to make changes in product specificaoti n without 2900 E. Plano Pkwy, Plano, TX 75074 Ph: +1 972 323 2200 nocti e or liability. All informaoti n is subject to TT Electronics own data and is www.ttelectronics.com sensors ttelectronics.com considered accurate at time of going to print. Rev E 01/2020 Page 1 TT electronics plc Surface Mount Dual NPN Transistor 2N5794U (TX, TXV) Electrical Specifications Absolute Maximum Ratings (T = 25 C unless otherwise noted) A Collector-Emitter Voltage 45 V Collector-Base Voltage 75 V Emitter -Base Voltage 6 V Collector Current-Continuous 600 mA Operating Junction Temperature (T ) -65 C to +200 C J Storage Junction Temperature (T ) -65 C to +200 C stg Power Dissipation T = 25C 0.5 W A (1) Power Dissipation Tc = 25 C 0.6 W Soldering Temperature (vapor phase reflow for 30 seconds) 215 C Soldering Temperature (heated collet for 5 seconds) 260 C Electrical Characteriscti s (T = 25 C unless otherwise noted) A SYMBOL PARAMETER MIN MAX UNITS TEST CONDITIONS OFF CHARACTERISTICS (1) V Collector-Emitter Breakdown Voltage 40 - V I = 10 mA (BR)CEO C I Collector-Base Cuto Cuff rrent 10 A V = 75 V CBO1 CB I Collector-Base Cuto Cuff rrent 10 nA V = 50 V CBO2 CB I Collector-Base Cuto Cuff rrent 10 A V = 50 V, T = 150 C CBO3 BC A I Emitter -Base Breakdown Voltage 10 V V = 6 V EBO1 EB I Emitter -Base Cuto Cuff rrent 10 nA V = 4 V EBO2 EB h 35 - V = 10 V, I = 0.1 mA FE1 CE C h 50 - V = 10 V, I = 1.0 mA FE2 CE C (1) h 75 - V = 10 V, I = 10 mA FE3 CE C (1) h Forward-Current Transfer Ratio 100 300 - V = 10 V, I = 150 mA FE4 CE C (1) h 40 - V = 10 V, I = 300 mA FE5 CE C (1) h 50 - V = 1.0 V, I = 150 mA FE6 CE C (1) h 40 - V = 10 V, I = 150 mA, T = -55 C FE7 CE C A General Note TT Electronics OPTEK Technology TT Electronics reserves the right to make changes in product specificaoti n without 2900 E. Plano Pkwy, Plano, TX 75074 Ph: +1 972 323 2200 nocti e or liability. All informaoti n is subject to TT Electronics own data and is www.ttelectronics.com sensors ttelectronics.com considered accurate at time of going to print. Rev E 01/2020 Page 2 TT electronics plc