Prod uct Bul le tin JANTX, JANTXV, 2N5796U Sep tem ber 1996 Sur face Mount Dual PNP Tran sis tor Type JANTX, JANTXV, 2N5796U .058 (1.47) o Fea tures Ab so lute Maxi mum Rat ings (T = 25 C un less oth er wise noted) A Collector- Emitter Volt age 60 V Ceramic surface mount package Collector- Base Volt age . 60 V Hermetically sealed Emitter- Base Volt age 5 V Miniature package minimizes circuit Col lec tor Cur rent Con tinu ous 600 mA board area required o o Op er at ing and Stor age (T , T ) . -65 C to +200 C Electrical performance similar to dual J stg 2N2907A Power Dis si pa tion (sin gle tran sis tor, no heat sink) . 0.5 W Power Dis si pa tion (to tal de vice) . 0.6 W Qualification per MIL-PRF-19500/496 De scrip tion The JANTX2N5796U is a hermetically sealed, ceramic surface-mount device, consisting of two individual silicon PNP transistors. The six pin ceramic package is ideal for designs where board space and device weight are important design considerations. Typical screening and lot acceptance tests are provided on page 13-4. The burn-in condition is V = 30 V, P = 300 CB D o mW each transistor, T = 25 C. Refer A to MIL-PRF-19500/496 for complete requirements. When ordering parts without processing, do not use a JAN prefix. Op tek Tech nol ogy, Inc. 1215 W. Crosby Road Car roll ton, Texas 75006 (972) 323- 2200 Fax (972) 323- 2396 15-16Type JANTX, JANTXV, 2N5796U o Elec tri cal Char ac ter ics (T = 25 C un less oth er wise noted) A SYM BOL PA RAME TER MIN MAX UNIT TEST CON DI TIONS V(BR)CBO Collector-Base Breakdown Voltage 75 V I = 10 A C (1) V Collector-Emitter Breakdown Voltage 60 V I = 10 mA (BR)CEO C V Emitter-Base Breakdown Voltage 5 V (BR)EBO I = 10 A E I Collector-Base Cutoff Current 10 nA V = 50 V CBO1 CB o I Collector-Base Cutoff Current V = 50 V, T = 150 C CBO2 10 A BC A I Emitter-Base Cutoff Current 100 nA V = 3 V EBO EB h Forward Current Transfer Ratio 75 FE1 V = 10 V, I = 100 A CE C h Forward Current Transfer Ratio 100 VCE = 10 V, I = 1.0 mA FE2 C (1) h Forward Current Transfer Ratio 100 V = 10 V, I = 10 mA FE3 CE C (1) h Forward Current Transfer Ratio 100 300 V = 10 V, I = 150 mA FE4 CE C o (1) h Forward Current Transfer Ratio 40 V = 10 V, I = 150 mA, T = -55 C FE7 CE C A (1) h Forward Current Transfer Ratio 50 V = 10 V, I = 300 mA FE5 CE C (1) h Forward Current Transfer Ratio 50 V = 1.0 V, I = 150 mA FE6 CE C (1) V Collector-Emitter Saturation Voltage 0.4 V I = 150 mA, I = 15 mA CE(SAT)1 C B (1) V Collector-Emitter Saturation Voltage 1.6 V I = 500 mA, I = 50 mA CE(SAT)2 C B (1) V Base-Emitter Saturation Voltage 1.3 V I = 150 mA, I = 15 mA BE(SAT)1 C B (1) V Base-Emitter Saturation Voltage 2.6 V I = 500 mA, I = 50 mA BE(SAT)2 C B Magnitude of Small-Signal Short-Circuit V = 20 V, I = 20 mA, f = 100 MHz CE C h 2 10 fe Forward Current Transfer Ratio C Open Circuit Output Capacitance obo 8 pF V = 10 V, I = 0, 100 kHz f 1 MHz CB E C Input Capacitance 25 pF ibo V = 2.0 V, I = 0, 100 kHz f 1 MHz EB E t Turn-On Time 50 ns V = 30 V, I = 150 mA, I = 15 mA on CC C B1 Turn-Off Time V = 30 V, I = 150 mA, I = I = 15 mA, CC C B1 B2 t off 140 ns PW = 200 ns (1) Pulsed Test: Pulse Width = 300 s 50, 1-2 % Duty Cycle. Optek reserves the right to make changes at any time in order to improve design and to supply the best product possible. Optek Technology, Inc. 1215 W. Crosby Road Carrollton, Texas 75006 (972)323-2200 Fax (972)323-2396 15-17