Product Information

2N1893

2N1893 electronic component of Central Semiconductor

Datasheet
Central Semiconductor Bipolar Transistors - BJT NPN Small Signal

Manufacturer: Central Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1000: USD 1.2586 ea
Line Total: USD 1258.6

0 - Global Stock
MOQ: 1000  Multiples: 1000
Pack Size: 1000
Availability Price Quantity
0 - WHS 1


Ships to you between Tue. 21 May to Mon. 27 May

MOQ : 5
Multiples : 1

Stock Image

2N1893
Central Semiconductor

5 : USD 2.7597
15 : USD 2.5317
40 : USD 2.1325
125 : USD 1.5167
300 : USD 1.1746

0 - WHS 2


Ships to you between Mon. 27 May to Wed. 29 May

MOQ : 1000
Multiples : 1000

Stock Image

2N1893
Central Semiconductor

1000 : USD 1.1927
2500 : USD 1.1146
5000 : USD 1.0868

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Brand
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
Height
Length
Continuous Collector Current
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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2N1893 www.centralsemi.com SILICON DESCRIPTION: NPN TRANSISTOR The CENTRAL SEMICONDUCTOR 2N1893 is a silicon NPN epitaxial planar transistor designed for small signal general purpose switching applications. MARKING: FULL PART NUMBER TO-39 CASE MAXIMUM RATINGS: (T =25C unless otherwise noted) A SYMBOL UNITS Collector-Base Voltage V 120 V CBO Collector-Emitter Voltage V 100 V CER Collector-Emitter Voltage V 80 V CEO Emitter-Base Voltage V 7.0 V EBO Continuous Collector Current I 500 mA C Power Dissipation (T=25C) P 3.0 W C D Power Dissipation P 0.8 W D Operating and Storage Junction Temperature T , T -65 to +200 C J stg ELECTRICAL CHARACTERISTICS: (T =25C unless otherwise noted) A SYMBOL TEST CONDITIONS MIN MAX UNITS I V=90V 10 nA CBO CB I V=5.0V 10 nA EBO EB BV I=100A 120 V CBO C BV I =10mA, R=10 100 V CER C BE BV I=10mA 80 V CEO C BV I=100A 7.0 V EBO E V I =50mA, I=5.0mA 1.2 V CE(SAT) C B V I =150mA, I=15mA 5.0 V CE(SAT) C B V I =50mA, I=5.0mA 0.9 V BE(SAT) C B V I =150mA, I=15mA 1.3 V BE(SAT) C B h V =10V, I=100A 20 FE CE C h V =10V, I=10mA 35 FE CE C h V =10V, I=150mA 40 120 FE CE C f V =10V, I =50mA, f=20MHz 50 MHz T CE C C V =10V, I =0, f=100kHz 15 pF ob CB E C V =0.5V, I =0, f=100kHz 85 pF ib EB C R1 (23-April 2013)2N1893 SILICON NPN TRANSISTOR TO-39 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Emitter 2) Base 3) Collector MARKING: FULL PART NUMBER R1 (23-April 2013) www.centralsemi.com

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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