2N6211 2N6212 2N6213 www.centralsemi.com DESCRIPTION: SILICON The CENTRAL SEMICONDUCTOR 2N6211, 2N6212, PNP POWER TRANSISTORS and 2N6213 are silicon PNP transistors designed for high speed switching and high voltage amplifier applications. MARKING: FULL PART NUMBER TO-66 CASE MAXIMUM RATINGS: (T =25C) SYMBOL 2N6211 2N6212 2N6213 UNITS C Collector-Base Voltage V 275 350 400 V CBO Collector-Emitter Voltage V 225 300 350 V CEO Emitter-Base Voltage V 6.0 V EBO Continuous Collector Current I 2.0 A C Peak Collector Current I 5.0 A CM Continuous Base Current I 1.0 A B Power Dissipation P 35 W D Operating and Storage Junction Temperature T , T -65 to +200 C J stg Thermal Resistance 5.0 C/W JC ELECTRICAL CHARACTERISTICS: (T =25C unless otherwise noted) C 2N6211 2N6212 2N6213 SYMBOL TEST CONDITIONS MIN MAX MIN MAX MIN MAX UNITS I V =250V, V=1.5V - 0.5 - - - - mA CEV CE BE I V =315V, V=1.5V - - - 0.5 - - mA CEV CE BE I V =360V, V =1.5V - - - - - 0.5 mA CEV CE BE I V =250V, V =1.5V, T=100C - 5.0 - - - - mA CEV CE BE C I V =315V, V =1.5V, T=100C - - - 5.0 - - mA CEV CE BE C I V =360V, V =1.5V, T=100C - - - - - 5.0 mA CEV CE BE C I V =150V - 5.0 - 5.0 - 5.0 mA CEO CE I V =6.0V - 1.0 - 0.5 - 0.5 mA EBO EB BV I =50mA, V =1.5V, L=10mH 275 - 350 - 400 - V CEV C BE BV I =50mA, R=50 250 - 325 - 375 - V CER C BE BV I=50mA 225 - 300 - 350 - V CEO C BV I=1.0mA 6.0 - - - - - V EBO E BV I=0.5mA - - 6.0 - 6.0 - V EBO E V I =1.0A, I=125mA - 1.4 - 1.6 - 2.0 V CE(SAT) C B V I =1.0A, I=125mA - 1.4 - 1.4 - 1.4 V BE(SAT) C B h V =2.8V, I=1.0A 10 100 - - - - FE CE C h V =3.2V, I=1.0A - - 10 100 - - FE CE C h V =4.0V, I=1.0A - - - - 10 100 FE CE C R3 (11-November 2015)2N6211 2N6212 2N6213 SILICON PNP POWER TRANSISTORS ELECTRICAL CHARACTERISTICS - Continued: (T =25C unless otherwise noted) C SYMBOL TEST CONDITIONS MIN MAX UNITS f V =10V, I =200mA, f=5.0MHz 20 MHz T CE C C V =10V, I =0, f=1.0MHz 220 pF ob CB E t V =200V, I =1.0A, I =I=125mA 0.6 s r CC C B1 B2 t V =200V, I =1.0A, I =I=100mA 2.5 s s CC C B1 B2 t V =200V, I =1.0A, I =I=125mA 0.6 s f CC C B1 B2 I * V=40V 875 mA S/b CE *Pulsed: 1.0s non-repetitive pulse. TO-66 CASE - MECHANICAL OUTLINE MARKING: FULL PART NUMBER R3 (11-November 2015) www.centralsemi.com