CMLT3904E CMLT3904EG* NPN CMLT3906E CMLT3906EG* PNP CMLT3946E CMLT3946EG* NPN/PNP www.centralsemi.com ENHANCED SPECIFICATION DESCRIPTION: SURFACE MOUNT SILICON These CENTRAL SEMICONDUCTOR devices COMPLEMENTARY TRANSISTORS are combinations of dual, enhanced specification transistors in a space saving SOT-563 package, designed for small signal general purpose amplifier and switching applications. MARKING CODES: CMLT3904E: L04 CMLT3906E: L06 CMLT3946E: L46 CMLT3904EG*: C4G SOT-563 CASE CMLT3906EG*: C6G CMLT3946EG*: 46G * Device is Halogen Free by design ENHANCED SPECIFICATIONS: h from 60 MIN to 70 MIN (NPN/PNP) FE BV from 40V MIN to 60V MIN (PNP) V from 0.3V MAX to 0.2V MAX (NPN) CE(SAT) CBO from 0.4V MAX to 0.2V MAX (PNP) BV from 5.0V MIN to 6.0V MIN (PNP) EBO MAXIMUM RATINGS: (T =25C) SYMBOL UNITS A Collector-Base Voltage V 60 V CBO Collector-Emitter Voltage V 40 V CEO Emitter-Base Voltage V 6.0 V EBO Continuous Collector Current I 200 mA C Power Dissipation (Note 1) P 350 mW D Power Dissipation (Note 2) P 300 mW D Power Dissipation (Note 3) P 150 mW D Operating and Storage Junction Temperature T , T -65 to +150 C J stg Thermal Resistance 357 C/W JA ELECTRICAL CHARACTERISTICS: (T =25C unless otherwise noted) A NPN PNP SYMBOL TEST CONDITIONS MIN TYP TYP MAX UNITS I V =30V, V=3.0V - - - 50 nA CEV CE EB BV I=10A 60 115 90 - V CBO C BV I=1.0mA 40 60 55 - V CEO C BV I=10A 6.0 7.5 7.9 - V EBO E V I =10mA, I=1.0mA - 0.057 0.050 0.100 V CE(SAT) C B V I =50mA, I=5.0mA - 0.100 0.100 0.200 V CE(SAT) C B V I =10mA, I=1.0mA 0.65 0.75 0.75 0.85 V BE(SAT) C B V I =50mA, I=5.0mA - 0.85 0.85 0.95 V BE(SAT) C B h V =1.0V, I=0.1mA 90 240 130 - FE CE C h V =1.0V, I=1.0mA 100 235 150 - FE CE C h V =1.0V, I=10mA 100 215 150 300 FE CE C h V =1.0V, I=50mA 70 110 120 - FE CE C h V =1.0V, I=100mA 30 50 55 - FE CE C Enhanced Specification 2 Notes: 1) Ceramic or aluminum core PC Board with copper mounting pad area of 4.0mm 2 2) FR-4 Epoxy PC Board with copper mounting pad area of 4.0mm 2 3) FR-4 Epoxy PC Board with copper mounting pad area of 1.4mm R8 (21-September 2018) CMLT3904E CMLT3904EG* NPN CMLT3906E CMLT3906EG* PNP CMLT3946E CMLT3946EG* NPN/PNP ENHANCED SPECIFICATION SURFACE MOUNT SILICON COMPLEMENTARY TRANSISTORS ELECTRICAL CHARACTERISTICS PER TRANSISTOR - Continued: (T =25C) A SYMBOL TEST CONDITIONS MIN MAX UNITS f V =20V, I =10mA, f=100MHz 300 MHz T CE C C V =5.0V, I =0, f=1.0MHz 4.0 pF ob CB E C V =0.5V, I =0, f=1.0MHz 12 pF ib BE C h V =10V, I =1.0mA, f=1.0kHz 1.0 12 k ie CE C -4 h V =10V, I =1.0mA, f=1.0kHz 0.1 10 x10 re CE C h V =10V, I =1.0mA, f=1.0kHz 100 400 fe CE C h V =10V, I =1.0mA, f=1.0kHz 1.0 60 S oe CE C NF V =5.0V, I =100A, R =1.0k CE C S f=10Hz to 15.7kHz 4.0 dB t V =3.0V, V =0.5V, I =10mA, I=1.0mA 35 ns d CC BE C B1 t V =3.0V, V =0.5V, I =10mA, I=1.0mA 35 ns r CC BE C B1 t V =3.0V, I =10mA, I =I=1.0mA 200 ns s CC C B1 B2 t V =3.0V, I =10mA, I =I =1.0mA 50 ns f CC C B1 B2 SOT-563 CASE - MECHANICAL OUTLINE LEAD CODE: 6 5 4 6 5 4 1) Emitter Q1 2) Base Q1 3) Collector Q2 4) Emitter Q2 5) Base Q2 6) Collector Q1 1 2 3 1 2 3 CMLT3904E CMLT3906E CMLT3946E CMLT3904EG* CMLT3906EG* CMLT3946EG* * Device is Halogen Free by design R8 (21-September 2018) www.centralsemi.com