Product Information

CMLT8099 TR

CMLT8099 TR electronic component of Central Semiconductor

Datasheet
Bipolar Transistors - BJT Dual NPN Trans 500mA 80Vceo 350mW

Manufacturer: Central Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.6551 ea
Line Total: USD 0.66

11620 - Global Stock
Ships to you between
Mon. 03 Jun to Wed. 05 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2793 - WHS 1


Ships to you between Mon. 03 Jun to Wed. 05 Jun

MOQ : 1
Multiples : 1

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CMLT8099 TR
Central Semiconductor

1 : USD 0.4413
10 : USD 0.3785
100 : USD 0.267
500 : USD 0.2136
1000 : USD 0.1791
3000 : USD 0.1696
9000 : USD 0.1542
24000 : USD 0.1519
45000 : USD 0.1483

     
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CMLT8099 www.centralsemi.com SURFACE MOUNT DUAL NPN SMALL SIGNAL DESCRIPTION: SILICON TRANSISTORS The CENTRAL SEMICONDUCTOR CMLT8099 consists of two individual, isolated 8099 NPN silicon transistors, manufactured by the epitaxial planar process and epoxy molded in an SOT-563 surface mount package. This PICOmini device has been designed for small signal general purpose amplifier applications. MARKING CODE: C89 SOT-563 CASE FEATURES: Device is Halogen Free by design APPLICATIONS: Current I =500mA C Small signal general purpose amplifiers Voltage V =80V CEO MAXIMUM RATINGS: (T =25C) SYMBOL UNITS A Collector-Base Voltage V 80 V CBO Collector-Emitter Voltage V 80 V CEO Emitter-Base Voltage V 6.0 V EBO Continous Collector Current I 500 mA C Power Dissipation P 350 mW D Operating and Storage Junction Temperature T , T -65 to +150 C J stg Thermal Resistance 357 C/W JA ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (T =25C unless otherwise noted) A SYMBOL TEST CONDITIONS MIN MAX UNITS I V=80V 0.1 A CBO CB I V=6.0V 0.1 A EBO BE BV I=100A 80 V CBO C BV I=10mA 80 V CEO C BV I=10A 6.0 V EBO E V I =100mA, I=5.0mA 0.4 V CE(SAT) C B V I =100mA, I=10mA 0.3 V CE(SAT) C B V V =5.0V, I=10mA 0.6 0.8 V BE(ON) CE C h V =5.0V, I=1.0mA 100 300 FE CE C h V =5.0V, I=10mA 100 FE CE C h V =5.0V, I=100mA 75 FE CE C f V =5.0V, I =10mA, f=100MHz 150 MHz T CE C C V =10V, I =0, f=1.0MHz 6.0 pF ob CB E C V =0.5V, I =0, f=1.0MHz 25 pF ib BE C R1 (20-January 2010)CMLT8099 SURFACE MOUNT DUAL NPN SMALL SIGNAL SILICON TRANSISTORS SOT-563 CASE - MECHANICAL OUTLINE PIN CONFIGURATION LEAD CODE: 1) Emitter Q1 2) Base Q1 3) Collector Q2 4) Emitter Q2 5) Base Q2 6) Collector Q1 MARKING CODE: C89 R1 (20-January 2010) www.centralsemi.com

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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