CMPDM302PH www.centralsemi.com SURFACE MOUNT SILICON ENHANCEMENT-MODE DESCRIPTION: P-CHANNEL MOSFET The CENTRAL SEMICONDUCTOR CMPDM302PH is a high current P-channel enhancement-mode silicon MOSFET, manufactured by the P-channel DMOS process, and is designed for high speed pulsed amplifier and driver applications. This MOSFET offers high current, low r , low threshold voltage, and DS(ON) low leakage current. MARKING CODE: 302C SOT-23F CASE FEATURES: APPLICATIONS: Low r (0.129 MAX V =2.5V) Load/Power switches DS(ON) GS Power supply converter circuits High current (I =2.4A) D Battery powered portable equipment Logic level compatibility MAXIMUM RATINGS: (T =25C) SYMBOL UNITS A Drain-Source Voltage V 30 V DS Gate-Source Voltage V 12 V GS Continuous Drain Current (Steady State) I 2.4 A D Maximum Pulsed Drain Current, tp=10s I 9.6 A DM Power Dissipation P 350 mW D Operating and Storage Junction Temperature T , T -55 to +150 C J stg Thermal Resistance 357 C/W JA ELECTRICAL CHARACTERISTICS: (T =25C unless otherwise noted) A SYMBOL TEST CONDITIONS MIN TYP MAX UNITS I , I V =12V, V=0 100 nA GSSF GSSR GS DS I V =20V, V=0 1.0 A DSS DS GS BV V =0, I=250A 30 V DSS GS D V V =V , I=250A 0.7 1.4 V GS(th) GS DS D r V =4.5V, I=1.2A 0.050 0.091 DS(ON) GS D r V =2.5V, I=1.2A 0.066 0.129 DS(ON) GS D g V =5.0V, I=2.4A 4.6 S FS DS D C V =10V, V =0, f=1.0MHz 69 pF rss DS GS C V =10V, V =0, f=1.0MHz 800 pF iss DS GS C V =10V, V =0, f=1.0MHz 62 pF oss DS GS Q V =10V, V =5.0V, I=2.4A 7.0 9.6 nC g(tot) DD GS D Q V =10V, V =5.0V, I=2.4A 1.4 4.2 nC gs DD GS D Q V =10V, V =5.0V, I=2.4A 1.5 2.6 nC gd DD GS D t V =10V, I =2.4A, R=10 12 ns on DD D G t V =10V, I =2.4A, R =10 17 ns off DD D G R2 (24-February 2014)CMPDM302PH SURFACE MOUNT SILICON ENHANCEMENT-MODE P-CHANNEL MOSFET SOT-23F CASE - MECHANICAL OUTLINE 21 3 PIN CONFIGURATION LEAD CODE: 1) Gate 2) Source 3) Drain MARKING CODE: 302C R2 (24-February 2014) www.centralsemi.com