Product Information

CMST3906 TR

CMST3906 TR electronic component of Central Semiconductor

Datasheet
Central Semiconductor Bipolar Transistors - BJT 40Vcbo 40Vceo Comp 5.0Vebo 200mA 275mW

Manufacturer: Central Semiconductor
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Price (USD)

3000: USD 0.0721 ea
Line Total: USD 216.3

28218 - Global Stock
Ships to you between
Fri. 17 May to Thu. 23 May
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
5322 - WHS 1


Ships to you between Thu. 23 May to Mon. 27 May

MOQ : 1
Multiples : 1

Stock Image

CMST3906 TR
Central Semiconductor

1 : USD 0.3795
10 : USD 0.2714
100 : USD 0.123
1000 : USD 0.0978
3000 : USD 0.0851
9000 : USD 0.0794
24000 : USD 0.0748
45000 : USD 0.0725
99000 : USD 0.069

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Technology
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Brand
Tradename
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
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CMST3904 NPN CMST3906 PNP www.centralsemi.com SURFACE MOUNT DESCRIPTION: COMPLEMENTARY The CENTRAL SEMICONDUCTOR CMST3904, SILICON TRANSISTORS CMST3906 types are complementary silicon transistors manufactured by the epitaxial planar process, epoxy molded in a SUPERmini surface mount package, designed for small signal general purpose amplifier and switching applications. MARKING CODES: CMST3904: 1AC CMST3906: 2AC SOT-323 CASE MAXIMUM RATINGS: (T =25C) SYMBOL CMST3904 CMST3906 UNITS A Collector-Base Voltage V 60 40 V CBO Collector-Emitter Voltage V 40 40 V CEO Emitter-Base Voltage V 6.0 5.0 V EBO Continuous Collector Current I 200 mA C Power Dissipation P 275 mW D Operating and Storage Junction Temperature T T -65 to +150 C J stg , Thermal Resistance 455 C/W JA ELECTRICAL CHARACTERISTICS: (T =25C unless otherwise noted) A CMST3904 CMST3906 SYMBOL TEST CONDITIONS MIN MAX MIN MAX UNITS I V =30V, V=3.0V - 50 - 50 nA CEV CE EB BV I=10A 60 - 40 - V CBO C BV I=1.0mA 40 - 40 - V CEO C BV I=10A 6.0 - 5.0 - V EBO E V I =10mA, I=1.0mA - 0.20 - 0.25 V CE(SAT) C B V I =50mA, I=5.0mA - 0.30 - 0.40 V CE(SAT) C B V I =10mA, I=1.0mA 0.65 0.85 0.65 0.85 V BE(SAT) C B V I =50mA, I=5.0mA - 0.95 - 0.95 V BE(SAT) C B h V =1.0V, I=0.1mA 40 - 60 - FE CE C h V =1.0V, I=1.0mA 70 - 80 - FE CE C h V =1.0V, I=10mA 100 300 100 300 FE CE C h V =1.0V, I=50mA 60 - 60 - FE CE C h V =1.0V, I=100mA 30 - 30 - FE CE C f V =20V, I =10mA, f=100MHz 300 - 250 - MHz T CE C R4 (10-June 2010)CMST3904 NPN CMST3906 PNP SURFACE MOUNT COMPLEMENTARY SILICON TRANSISTORS ELECTRICAL CHARACTERISTICS - Continued: (T =25C unless otherwise noted) A CMST3904 CMST3906 SYMBOL TEST CONDITIONS MIN MAX MIN MAX UNITS C V =5.0V, I =0, f=1.0MHz - 4.0 - 4.5 pF ob CB E C V =0.5V, I =0, f=1.0MHz - 8.0 - 10 pF ib BE C h V =10V, I =1.0mA, f=1.0kHz 1.0 10 2.0 12 k ie CE C -4 h V =10V, I =1.0mA, f=1.0kHz 0.5 8.0 0.1 10 x10 re CE C h V =10V, I =1.0mA, f=1.0kHz 100 400 100 400 fe CE C h V =10V, I =1.0mA, f=1.0kHz 1.0 40 3.0 60 S oe CE C NF V =5.0V, I =100mA, R =1.0k CE C S f=10Hz to 15.7kHz - 5.0 - 4.0 dB t V =3.0V, V =0.5V, I =10mA, I =1.0mA - 35 - 35 ns d CC BE C B1 t V =3.0V, V =0.5V, I =10mA, I =1.0mA - 35 - 35 ns r CC BE C B1 t V =3.0V, I =10mA, I =I=1.0mA - 200 - 225 ns s CC C B1 B2 t V =3.0V, I =10mA, I =I=1.0mA - 50 - 75 ns f CC C B1 B2 SOT-323 CASE - MECHANICAL OUTLINE PIN CONFIGURATIONS LEAD CODES: 1) Base 2) Emitter 3) Collector MARKING CODES: CMST3904: 1AC CMST3906: 2AC CMST3904 NPN CMST3906 PNP R4 (10-June 2010) www.centralsemi.com

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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