CTLDM7002A-M621
SURFACE MOUNT SILICON
www.centralsemi.com
N-CHANNEL
DESCRIPTION:
ENHANCEMENT-MODE
The CENTRAL SEMICONDUCTOR CTLDM7002A-M621
MOSFET
is a silicon N-Channel enhancement-mode MOSFET in
a small, thermally efficient, TLM 2x1mm package.
MARKING CODE: CP
TLM621 CASE FEATURES:
Low r
DS(ON)
Device is Halogen Free by design
Low V
DS(ON)
APPLICATIONS: Low Threshold Voltage
Load/Power Switches Fast Switching
Power Supply Converter Circuits Logic Level Compatible
Battery Powered Portable Equipment Small TLM 2x1mm Package
MAXIMUM RATINGS: (T =25C) SYMBOL UNITS
A
Drain-Source Voltage V 60 V
DS
Drain-Gate Voltage V 60 V
DG
Gate-Source Voltage V 40 V
GS
Continuous Drain Current I 280 mA
D
Continuous Source Current (Body Diode) I 280 mA
S
Maximum Pulsed Drain Current I 1.5 A
DM
Maximum Pulsed Source Current I 1.5 A
SM
Power Dissipation (Note 1) P 0.9 W
D
Operating and Storage Junction Temperature T T -65 to +150 C
J, stg
Thermal Resistance (Note 1) 139 C/W
JA
ELECTRICAL CHARACTERISTICS: (T =25C unless otherwise noted)
A
SYMBOL TEST CONDITIONS MIN MAX UNITS
I , I V =20V, V=0 100 nA
GSSF GSSR GS DS
I V =60V, V=0 1.0 A
DSS DS GS
I V =60V, V =0, T=125C 500 A
DSS DS GS J
I V =10V, V =10V 500 mA
D(ON) GS DS
BV V =0, I=10A 60 V
DSS GS D
V V =V I=250A 1.0 2.5 V
GS(th) DS GS, D
V V =10V, I=500mA 1.0 V
DS(ON) GS D
V V =5.0V, I =50mA 0.15 V
DS(ON) GS D
V V =0, I=400mA 1.2 V
SD GS S
2
Notes: (1) FR-4 Epoxy PCB with copper mounting pad area of 33mm .
R3 (9-February 2015)CTLDM7002A-M621
SURFACE MOUNT SILICON
N-CHANNEL
ENHANCEMENT-MODE
MOSFET
ELECTRICAL CHARACTERISTICS - Continued: (T =25C unless otherwise noted)
A
SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
r V =10V, I=500mA 2.0
DS(ON) GS D
r V =10V, I =500mA, T=125C 3.5
DS(ON) GS D J
r V =5.0V, I=50mA 3.0
DS(ON) GS D
r V =5.0V, I =50mA, T=125C 5.0
DS(ON) GS D J
g V =10V, I=200mA 80 mS
FS DS D
C V =25V, V =0, f=1.0MHz 5.0 pF
rss DS GS
C V =25V, V =0, f=1.0MHz 50 pF
iss DS GS
C V =25V, V =0, f=1.0MHz 15 pF
oss DS GS
Q V =30V, V =4.5V, I=100mA 0.592 nC
g(tot) DS GS D
Q V =30V, V =4.5V, I=100mA 0.196 nC
gs DS GS D
Q V =30V, V =4.5V, I=100mA 0.148 nC
gd DS GS D
t , t V =30V, V =10V, I =200mA,
on off DD GS D
R =25, R=150 20 ns
G L
TLM621 CASE - MECHANICAL OUTLINE
SUGGESTED MOUNTING PADS
(Dimensions in mm)
R0
PIN CONFIGURATION LEAD CODE:
1) Drain
2) Drain
3) Gate
4) Source
5) Drain
6) Drain
*Exposed pad P connects pins 1, 2, 5, and 6
MARKING CODE: CP
R3 (9-February 2015)
www.centralsemi.com