MPS650 MPS651 NPN
MPS750 MPS751 PNP
www.centralsemi.com
COMPLEMENTARY
DESCRIPTION:
SILICON TRANSISTORS
The CENTRAL SEMICONDUCTOR MPS650, MPS750
series devices are complementary silicon transistors
designed for general purpose amplifier and switching
applications requiring high gain at high collector current.
MARKING: FULL PART NUMBER
TO-92 CASE
MAXIMUM RATINGS: (T =25C unless otherwise noted) MPS650 MPS651
A
SYMBOL MPS750 MPS751 UNITS
Collector-Base Voltage V 60 80 V
CBO
Collector-Emitter Voltage V 40 60 V
CEO
Emitter-Base Voltage V 5.0 V
EBO
Continuous Collector Current I 2.0 A
C
Power Dissipation P 625 mW
D
Power Dissipation (T=25C) P 1.5 W
C D
Operating and Storage Junction Temperature T , T -65 to +150 C
J stg
Thermal Resistance 200 C/W
JA
Thermal Resistance 83.3 C/W
JC
MPS650 MPS651
ELECTRICAL CHARACTERISTICS: (T =25C) MPS750 MPS751
A
SYMBOL TEST CONDITIONS MIN MAX MIN MAX UNITS
I V=60V - 100 - - nA
CBO CB
I V=80V - - - 100 nA
CBO CB
I V=4.0V - 100 - 100 nA
EBO EB
BV I=100A 60 - 80 - V
CBO C
BV I=10mA 40 - 60 - V
CEO C
BV I=10A 5.0 - 5.0 - V
EBO E
V I =1.0A, I=100mA - 0.3 - 0.3 V
CE(SAT) C B
V I =2.0A, I=200mA - 0.5 - 0.5 V
CE(SAT) C B
V I =1.0A, I=100mA - 1.2 - 1.2 V
BE(SAT) C B
V V =2.0V, I=1.0A - 1.0 - 1.0 V
BE(ON) CE C
h V =2.0V, I=50mA 75 - 75 -
FE CE C
h V =2.0V, I=500mA 75 - 75 -
FE CE C
h V =2.0V, I=1.0A 75 - 75 -
FE CE C
h V =2.0V, I=2.0A 40 - 40 -
FE CE C
f V =5.0V, I =50mA, f=100MHz 75 - 75 - MHz
T CE C
R1 (2-December 2014)MPS650 MPS651 NPN
MPS750 MPS751 PNP
COMPLEMENTARY
SILICON TRANSISTORS
TO-92 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Emitter
2) Base
3) Collector
MARKING:
FULL PART NUMBER
TYPICAL ELECTRICAL CHARACTERISTICS
R1 (2-December 2014)
www.centralsemi.com